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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 4.32mm |
| Length | 9.78mm |
| Model | TC4420EPA |
| Width | 6.6mm |
| Mount Type | Through Hole |
| Series | TC4420 |
| Output Current | 1.5A |
| Package Type | PDIP |
| Number of outputs | 5 |
| Rise Time | 25ns |
| Pin Count | 8 |
| Maximum Supply Voltage | 20V |
| Minimum Supply Voltage | 18V |
| Number of Drivers | 1 |
| Fall Time | 25ns |
| Driver Type | MOSFET |
| Low Output Impedance | 2.5Ω |
| Matched Rise and Fall Times | 25 ns (2500 pF load) |
| High Peak Output Current | 6A |
| ESD Protected | 4 kV |
| High Capacitive Load Drive Capability | 10,000 pF |
Microchip TC4420EPA MOSFET Gate Driver is a high-performance power management IC designed to drive power MOSFETs efficiently in industrial, electronic, and manufacturing applications. It supports a maximum supply voltage of 20V and delivers a peak output current of 6A through a single output channel.
Fabricated in CMOS technology, this non-inverting device offers improved power efficiency compared to bipolar drivers. The CMOS/TTL compatible inputs allow operation with input voltages ranging from -5V to VDD +0.3V, eliminating the need for external level shifting circuitry.
Output voltage swings rail-to-rail, ensuring reliable MOSFET drive voltages especially useful during startup and shutdown sequences. The device exhibits fast switching performance with typical propagation delays of 55ns and matched rise and fall times of 25ns at a 2500 pF load, making it suitable for high-frequency switching environments.
TC4420EPA features robust protection characteristics including latch-up protection to withstand over 1.5A reverse current and an ESD rating up to 4 kV for enhanced device durability. Its low output impedance of 2.5Ω supports driving capacitive loads up to 10,000 pF effectively.
Single output non-inverting MOSFET driver, CMOS fabrication. TTL/CMOS compatible input with wide voltage tolerance. Rail-to-rail output swing for stable MOSFET gate drive. Fast propagation delay and matched rise/fall times.
Latch-up and ESD protected for industrial robustness. Low output impedance and high capacitive load capability. Compact through-hole PDIP package (9.78 x 6.6 x 4.32 mm).
This IC is widely used in electronic components, power connectors, and semiconductor circuits, particularly for power management and gate driving applications in industrial and electronic manufacturing. Its reliable performance and protective features make it suitable for demanding environments requiring efficient MOSFET gate control.
Explore the variety of MOSFET Gate Drivers and power management ICs at EnvMart for industrial and commercial electronics solutions.
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