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Taiwan Semiconductor Silicon Switching Diode, Single, 150mA, 100V, DO-35, 2-Pin, 1N4148 A0

Category Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Diameter 2.28mm
Brand Taiwan Semiconductor
Height 2.3mm
Length 5.08mm
Model 1N4148 A0
Width 2.3mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type DO-35
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 150mA
Maximum Peak Reverse Repetitive Voltage Vrrm 100V
Taiwan Semi 1N4148 A0 Switching Diode, 150mA 100V, 2-Pin DO-35Brand Taiwan Semiconductor

Key Features

  • Single silicon junction switching diode for signal and switching applications.
  • Maximum forward current of 150mA and peak surge current of 2A.
  • Rated for a maximum peak reverse repetitive voltage of 100V.
  • Maximum forward voltage of 1V for efficient operation.
  • DO-35 package and 2-pin through-hole configuration for easy PCB integration.
  • Fast peak reverse recovery time of 4ns ensures high-speed switching.
  • Maximum power dissipation of 500mW for reliable performance.
  • Wide operating temperature range from -65°C to 150°C.

Product Description

The Taiwan Semiconductor 1N4148 A0 is a single silicon junction switching diode designed for signal switching applications in electronic circuits. Featuring a robust DO-35 through-hole package with a 2-pin configuration, this diode offers reliable performance for PCB mounting and integration in a variety of electronic designs.

Drawing a maximum forward current of 150mA, the 1N4148 A0 is suited for use in both analog and digital systems where fast switching is required. It can withstand a peak non-repetitive forward surge current of up to 2A and features a maximum peak reverse repetitive voltage of 100V, making it suitable for protection and signaling applications. Its maximum forward voltage is capped at 1V, ensuring efficient conduction with minimal voltage drop.

The fast peak reverse recovery time of 4ns allows for rapid operation in high-frequency applications. With a maximum power dissipation rating of 500mW, the diode is engineered for stability and long operating life, even at elevated currents and voltages.

Constructed in a DO-35 package with dimensions of 5.08mm in length and 2.28mm diameter, the 1N4148 A0 is ideally sized for compact installations. It operates reliably across a wide ambient temperature range from -65°C to 150°C, making it suitable for industrial, laboratory, and commercial electronic systems where thermal performance is critical.

As a small signal switching diode, this product finds application in industrial electronics, manufacturing control systems, laboratory instrumentation, communication equipment, and various PCB-based electronic assemblies. It meets common industry standards and is engineered to provide high-speed switching and robust protection in circuits.

For engineers and designers seeking a high-quality, fast-switching diode for their next project, the Taiwan Semiconductor 1N4148 A0 offers proven reliability, compact form, and excellent operational parameters. Browse more switching Diodes and semiconductor products by Taiwan Semiconductor in the EnvMart electronics category for your industrial and laboratory needs.

Taiwan Semiconductor Silicon Switching Diode, Single, 150mA, 100V, DO-35, 2-Pin, 1N4148 A0
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Frequently Asked Questions

The maximum forward current for this diode is 150mA.

The peak reverse recovery time is 4ns, allowing for high-speed switching applications.

It is rated for a maximum peak reverse repetitive voltage of 100V.

This diode uses a DO-35 package type with a 2-pin through-hole configuration for easy PCB integration.

The maximum power dissipation rating is 500mW, ensuring reliable performance.

It operates reliably across a wide temperature range from -65°C to 150°C.

The maximum forward voltage is capped at 1V, which ensures efficient conduction with minimal voltage drop.

The dimensions are 5.08mm in length and 2.28mm in diameter.

The peak non-repetitive forward surge current rating is 2A.

This diode is suitable for signal switching applications in industrial electronics, manufacturing control systems, and communication equipment.

It is constructed as a single silicon junction diode, designed for signal and switching applications.

The fast switching capability, indicated by a peak reverse recovery time of 4ns, makes it suitable for high-frequency applications.

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