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Infineon Silicon Junction Diode 80A 650V TO-220 Single Fast Switching IDP40E65D2XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 15.95mm |
| Length | 10.2mm |
| Model | IDP40E65D2XKSA1 |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 200W |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 250A |
| Maximum Forward Voltage Vf | 2.2V |
| Peak Reverse Recovery Time trr | 83ns |
| Maximum Forward Current If | 80A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V |
| Low reverse recovery charge | forward voltage ratio for BiC performance |
Key Features
- High maximum forward current of 80A, suitable for demanding power applications.
- 650V peak reverse repetitive voltage ensures reliable high-voltage operation.
- TO-220 package enables efficient thermal management and easy through-hole mounting.
- Fast switching emitter controlled diode technology for improved efficiency and low turn-on losses.
- Low reverse recovery time (83ns) ensures minimal switching losses and better performance in high-frequency applications.
- Compact 2-pin design streamlines integration into power circuits.
- Maximum power dissipation of 200W for robust performance.
- Wide operating temperature range from -40°C to 175°C, ideal for industrial and commercial environments.
Product Description
Infineon IDP40E65D2XKSA1 is an advanced silicon junction diode engineered for fast switching and emitter-controlled performance in high-power, high-frequency applications. With a maximum forward current of 80A and a peak reverse voltage of 650V, it is designed for reliability and efficiency in demanding power conversion and rectification roles.
The device features a TO-220 package, providing superior thermal handling and straightforward through-hole mounting, making it suitable for industrial, telecom, UPS, welding, AC-DC, and motor drive systems up to 30 kHz. The compact 2-pin arrangement allows for efficient circuit integration and helps optimize board space in power electronics designs.
Infineon's emitter-controlled diode technology ensures fast switching, low reverse recovery loss (83ns), and low turn-on losses. This makes the device particularly effective in applications requiring high-speed transitions, such as power factor correction topologies and boost switching circuits. The maximum power dissipation of 200W supports robust continuous operation.
With a temperature-stable forward voltage and ease of paralleling, this diode provides flexibility for designers tackling demanding EMI compliance, conduction loss minimization, and high efficiency requirements. The product's wide operating temperature range from -40°C to 175°C supports deployment in harsh industrial and commercial environments.
This silicon junction diode is ideal for rectification, inverter, and protection circuits, and is a preferred choice for professional engineers in power electronics, manufacturing, telecom infrastructure, welding equipment, and smart industrial automation. The fast recovery and emitter-controlled design minimize losses, improve overall efficiency, and contribute to system reliability.
High current handling suitable for power factor correction, boost circuits, and high-frequency switching. Ultra-fast diode performance enhances system efficiency in renewable energy and industrial power applications. Reliable operation across broad ambient temperature ranges enables integration into advanced industrial systems.
Optimized package and design for quick PCB mounting, assembly, and replacement. Used in telecom, UPS, welding machines, AC-DC converters, and motor drive controls up to 30 kHz. Explore more industry-grade Diodes and semiconductor solutions from Infineon and related categories at EnvMart.
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Frequently Asked Questions
The maximum forward current of this diode is 80A, making it suitable for demanding power applications.
The diode has a peak reverse repetitive voltage rating of 650V, ensuring reliable high-voltage operation.
It has a maximum power dissipation capacity of 200W, supporting robust performance in various applications.
The dimensions of the TO-220 package are 15.95mm in height, 10.2mm in length, and 4.5mm in width.
The reverse recovery time of this diode is 83ns, which helps minimize switching losses in high-frequency applications.
This model operates within a temperature range of -40°C to 175°C, making it suitable for industrial and commercial environments.
It is designed for through-hole mounting, which facilitates easy installation in various applications.
This diode uses a single configuration, making it suitable for various rectification and protection applications.
It is suitable for applications such as power factor correction, boost circuits, and high-frequency switching in power electronics.
This diode has a pin count of 2, which is typical for its compact design.
The maximum forward voltage of this diode is 2.2V, which is important for its efficiency in power applications.
The emitter-controlled design enhances fast switching capabilities and reduces turn-on losses, improving overall efficiency in power circuits.
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