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Nexperia Switching Diode Common Anode 215 mA 90 V 3-Pin SOT-23 (TO-236AB) BAW56,215

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Nexperia Switching Diode Common Anode 215 mA 90 V 3-Pin SOT-23 (TO-236AB) BAW56,215

Name: Nexperia Switching Diode Common Anode 215 mA 90 V 3-Pin SOT-23 (TO-236AB) BAW56,215
Brand: Nexperia
SKU: 103554
Price: 0.03 USD
Availability: InStock

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Category Diode Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	BAW56,215
Width	1.4mm
Mount Type	Surface
Series	BAW56
Maximum Operating Temperature	150°C
Package Type	SOT-23 (TO-236AB)
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	250mW
Diode Configuration	Common Anode
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	90V
onsemi 70 V 200 mA Diode Switching 3-Pin SOT-23 BAW56LT1GBrand	onsemi

Key Features

Supports high-density circuit designs with low leakage.
High switching speed suitable for fast electronic switching applications.
Low capacitance ensuring efficient signal performance.
Silicon junction technology for reliable diode behavior.
Compact dimensions with 3 mm length, 1.4 mm width, and 1 mm height.
Operates in temperatures ranging from -65°C to 150°C.
Peak repetitive reverse voltage of 90 volts for robust voltage tolerance.
Maximum forward voltage of 1.25 volts to ensure minimal voltage drop.

Product Description

Nexperia BAW56,215 is a high-performance small signal switching diode with a common anode configuration, specifically engineered for surface mount applications. This diode supports a maximum forward current of 215 mA and peaks at a reverse repetitive voltage of 90 V. Encased in a compact 3-pin SOT-23 (TO-236AB) package, it measures 3 mm in length, 1.4 mm in width, and 1 mm in height, making it ideal for high-density circuit designs requiring space efficiency.

Constructed using silicon junction technology, the diode offers a low forward voltage of 1.25 V and a maximum power dissipation rating of 250 mW, ensuring reliable operation within compact electronic devices. Its peak reverse recovery time of 4 nanoseconds enables rapid switching, reducing power loss and improving overall circuit performance.

The diode operates reliably across a wide temperature range from -65°C to 150°C, making it suitable for diverse industrial, commercial, and consumer electronics applications. Its low leakage and low capacitance features enhance signal integrity and efficiency in switching diode applications.

Supports high-density circuit designs with low leakage. High switching speed suitable for fast electronic switching applications. Low capacitance ensuring efficient signal performance. Silicon junction technology for reliable diode operation.

Compact SOT-23 package measures 3x1.4x1 mm. Maximum forward current of 215 mA. Maximum peak repetitive voltage of 90 V. Maximum power dissipation of 250 mW. Operating temperature range from -65°C to 150°C. Peak reverse recovery time of 4 ns.

This diode is commonly deployed in industrial automation, telecommunications, automotive electronics, power management circuits, and consumer electronics. Its robust design and electrical specifications ensure dependable switching performance in compact surface mount PCB assemblies.

Explore EnvMart's Semiconductor category for a broad selection of high-quality discrete electronic components including Diodes, transistors, and integrated circuits suited for industrial, laboratory, and manufacturing uses.