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Nexperia N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK56E Surface Mount PSMN2R0-55YLHX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PSMN2R0-55YLHX |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | LFPAK56E |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10.3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Packaged in a 4-pin LFPAK56E surface mount package ideal for compact designs.
- Maximum drain-source resistance of 13.6 milliohms reduces conduction losses.
- Operates safely between -55°C and 150°C, suitable for harsh environments.
- Maximum gate-source voltage rating of 20 V for robust gate control.
- Power dissipation rating of 12.5 W ensures good thermal handling.
- Features SchottkyPlus technology for superior switching performance and low leakage.
- Supports avalanche rating qualified to 175 °C for reliability under transient conditions.
- Designed for high switching frequencies with low gate charge and soft body-diode recovery.
Product Description
The Nexperia PSMN2R0-55YLHX N-Channel MOSFET is an enhancement mode transistor in a compact 4-pin LFPAK56E surface mount package designed for efficient switching and power management applications. It offers a continuous drain current of 10.3 A and can withstand a maximum drain-source voltage of 30 V, making it suitable for a variety of low voltage high current electronic devices and circuits.
Engineered for performance, this MOSFET exhibits a maximum drain-source on-resistance of 13.6 milliohms which minimizes conduction losses and improves efficiency. The device supports a maximum gate-source voltage of 20 V and features low gate charge and output capacitance values, enabling superfast switching capabilities with soft body-diode recovery, thus reducing EMI and enhancing system reliability.
Operating over a temperature range of -55°C to 150°C, the PSMN2R0-55YLHX is avalanche rated and qualified to 175 °C, providing strong linear-mode and safe operating area characteristics essential for high-current switching environments. The SchottkyPlus technology integrated within ensures Schottky diode-like switching performance with low leakage currents, supporting optimal operation in battery powered and high switching frequency applications.
This MOSFET is ideal for industrial, power supply, motor control, telecommunications equipment, and power management systems that demand compact, reliable, and efficient power switching components. Its surface mount LFPAK56E package supports high-density PCB layouts with excellent thermal performance. The device does not carry automotive grade certifications but fits general power electronic applications requiring robust operation.
Packaged in compact 4-pin LFPAK56E SMD for space-constrained environments. Continuous drain current of 10.3 A with maximum voltage rating of 30 V. Low on-resistance reduces power loss and increases efficiency. Wide temperature operational range and avalanche rating for reliability.
Superfast switching with SchottkyPlus technology for EMI reduction. Suitable for battery powered systems and power management solutions. Explore more Nexperia components and similar MOSFETs on EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for the PSMN2R0-55YLHX is 10.3 A.
This model has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation rating is 12.5 W.
It features a maximum drain-source on-resistance of 13.6 milliohms, which reduces conduction losses.
The operating temperature range is from -55°C to 150°C.
This model is packaged in a 4-pin LFPAK56E surface mount package.
The maximum gate-source voltage rating is 20 V.
It features SchottkyPlus technology, which provides superior switching performance and low leakage.
This MOSFET is suitable for industrial applications, power supply, motor control, telecommunications equipment, and power management systems.
The PSMN2R0-55YLHX has a pin count of 4.
Key features include low on-resistance, wide temperature operational range, avalanche rating, and superfast switching capabilities.
The country of origin for this MOSFET is India.
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