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onsemi Small Signal NPN Transistor 100 mA, 45 V, 3-Pin SOT-23 Package BC850CLT1G

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onsemi Small Signal NPN Transistor 100 mA, 45 V, 3-Pin SOT-23 Package BC850CLT1G

Name: onsemi Small Signal NPN Transistor 100 mA, 45 V, 3-Pin SOT-23 Package BC850CLT1G
Brand: onsemi
SKU: 413209
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.94mm
Length	2.9mm
Model	BC850CLT1G
Width	1.3mm
Mount Type	Surface
Series	BC846ALT1G
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	45V
Minimum DC Current Gain hFE	90
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	300mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
Nexperia BC850C,215 Transistor, 100 mA NPN, 45 V, 3-Pin SOT-23Brand	Nexperia

Key Features

Compact 3-pin SOT-23 surface mount package suitable for automated PCB assembly.
Maximum collector current of 100 mA and collector-emitter voltage of 45 V.
Power dissipation rating of 300 mW ensures reliable performance in low-power circuits.
High transition frequency of 100 MHz supports high frequency applications.
Wide operating temperature range from -55°C to 150°C for harsh environments.
Minimum DC current gain (hFE) of 90 enhances amplification efficiency.
Single transistor configuration with NPN polarity for versatile switching and amplification.
Small physical size of 2.9 mm length, 1.3 mm width, and 0.94 mm height enables compact designs.

Product Description

Onsemi BC850CLT1G is a small signal NPN bipolar junction transistor (BJT) optimized for amplification and switching in electronic circuits requiring collector currents up to 100 mA and collector-emitter voltages up to 45 V. Packaged in the industry-standard 3-pin SOT-23 surface mount package, this transistor offers compact size and ease of automated high-volume assembly.

The transistor operates efficiently with a maximum power dissipation of 300 mW and a transition frequency of 100 MHz, making it suitable for low to medium frequency signal processing. It supports a wide operating temperature range from -55°C to 150°C, providing robustness for automotive and industrial environments.

It features a minimum DC current gain (hFE) of 90, facilitating good current amplification in general purpose applications. The device meets the AEC-Q101 automotive standard, ensuring high reliability and consistent performance for automotive electronics.

Key technical features include a maximum collector-base voltage of 50 V and a maximum emitter-base voltage of 6 V. The transistor’s compact dimensions (2.9 mm length x 1.3 mm width x 0.94 mm height) allow for dense PCB layouts, supporting modern electronic design trends.

This NPN transistor is ideal for use in general amplification circuits, switching regulators, signal amplification in communications equipment, and automotive electronic modules. Its versatility spans industrial, automotive, HVAC, manufacturing, and laboratory electronics.

Compact 3-pin SOT-23 surface mount package. Rated for 100 mA collector current and 45 V collector-emitter voltage. 300 mW maximum power dissipation. High frequency operation up to 100 MHz transition frequency. Wide operating temperature range from -55°C to 150°C.

Minimum DC current gain (hFE) of 90. Automotive standard compliant (AEC-Q101). Small physical dimensions enable high density circuit design. Explore the broad range of transistors and semiconductor components at EnvMart for your electronic design and manufacturing needs.

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