Nexperia P-Channel MOSFET, 230 mA, 30 V Enhancement Type, 3-Pin SOT-23 NX3008PBK,215

Nexperia NX3008PBK,215 is a high-performance P-channel MOSFET transistor designed for discrete semiconductor applications requiring efficient switching and signal amplification.

Featuring a maximum continuous drain current of 230 mA and a maximum drain-source voltage of 30 V, this enhancement-mode device is housed in a compact 3-pin SOT-23 surface mount package suitable for dense PCB layouts.

Its electrical characteristics include a maximum drain-source resistance of 6.5 ohms ensuring low conduction losses and a typical gate charge of 0.55 nC facilitating rapid switching cycles.

Rated for operation from -55°C up to 150°C and certified to the automotive standard AEC-Q101, the NX3008PBK,215 is reliable for industrial, automotive, and consumer electronics applications.

The device dissipates up to 1.14 W of power, balancing performance and thermal management. Its small form factor with dimensions of 3 mm length, 1.4 mm width, and 1 mm height enables integration into compact electronic circuits without compromising efficiency.

Designed for surface mount PCB assembly in electronic circuit designs. Suitable for automotive applications due to AEC-Q101 qualification. Reliable operation in industrial and consumer electronics environments. Compact SOT-23 package maximizes board space utilization.

Enhancement mode operation optimizes switching and energy efficiency. Temperature ratings support harsh operating conditions. Low gate charge enhances switching speed and reduces energy loss. Durable power dissipation rating ensures longevity in application.

Precise electrical parameters enable predictable performance in design. Explore our wide range of semiconductor components at EnvMart for all your electronic and power management needs.