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onsemi High Voltage NPN Transistor, 300 mA, 400 V, 2W Power Dissipation, 4-Pin SOT-223 FJT44KTF

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.8mm
Length 6.7mm
Model FJT44KTF
Width 7.5mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Pin Count 4
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 500V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 300mA
Transistor Configuration Single
onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand ON Semiconductor

Key Features

  • This transistor supports a maximum DC collector current of 300 mA.
  • It withstands a maximum collector-emitter voltage of 400 V.
  • Power dissipation is rated at 2 watts for reliable thermal performance.
  • Features a minimum DC current gain (hFE) of 40 ensuring good amplification.
  • The transistor is configured as a single NPN type with 4 pins for surface mounting.
  • Maximum collector-base voltage is 500 V and emitter-base voltage is 6 V.
  • Operating temperature ranges up to 150°C for durability.
  • Compact SOT-223 package measures 7.5 mm width, 6.7 mm length, and 1.8 mm height.

Product Description

onsemi FJT44KTF is a high voltage NPN bipolar junction transistor engineered for electronic components and power switching circuits operating at a maximum DC collector current of 300 mA and collector-emitter voltage of 400 V. Packaged in a compact 4-Pin SOT-223 package, it is intended for surface mount applications where space and thermal management are critical.

Its robust construction allows power dissipation of up to 2 watts, facilitating efficient heat dissipation and reliability under demanding conditions. The transistor provides a minimum DC current gain (hFE) of 40, making it suitable for amplification purposes in various circuit designs.

Additional maximum voltage ratings include a collector-base voltage (VCBO) of 500 V and emitter-base voltage (VEBO) of 6 V, ensuring rugged performance. It operates reliably up to temperatures of 150°C, covering performance needs in industrial, electronics manufacturing, and laboratory environments.

The physical dimensions of 7.5 mm width, 6.7 mm length, and 1.8 mm height support compact PCB layouts without compromising electrical performance. While not certified for automotive standards, its construction aligns with common bipolar transistor requirements.

Typical applications include industrial control systems, power management circuits, and general-purpose electronic switching. This transistor offers designers a dependable option for medium-power switching and amplification tasks in professional electronic assemblies.

This transistor supports a maximum DC collector current of 300 mA. It withstands a maximum collector-emitter voltage of 400 V. Power dissipation is rated at 2 watts for reliable thermal performance. Features a minimum DC current gain (hFE) of 40 ensuring good amplification.

The transistor is configured as a single NPN type with 4 pins for surface mounting. Maximum collector-base voltage is 500 V and emitter-base voltage is 6 V. Operating temperature ranges up to 150°C for durability. Compact SOT-223 package measures 7.5 mm width, 6.7 mm length, and 1.8 mm height.

Designed without automotive certification but suitable for diverse electronic circuit designs. Explore additional onsemi electronic components and discrete semiconductors in the Bipolar Transistors category at EnvMart for industrial and laboratory applications.

onsemi High Voltage NPN Transistor, 300 mA, 400 V, 2W Power Dissipation, 4-Pin SOT-223 FJT44KTF
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Frequently Asked Questions

The maximum DC collector current for this transistor is 300 mA.

It can withstand a maximum collector-emitter voltage of 400 V.

The power dissipation rating is 2 watts, allowing for reliable thermal performance.

The minimum DC current gain (hFE) is 40, which ensures good amplification.

The SOT-223 package measures 7.5 mm in width, 6.7 mm in length, and 1.8 mm in height.

The maximum operating temperature is 150°C.

It supports a maximum collector-base voltage (VCBO) of 500 V.

The maximum emitter-base voltage (VEBO) is 6 V.

This transistor is designed for surface mounting.

It is suitable for applications in industrial control systems, power management circuits, and general-purpose electronic switching.

The transistor is configured as a single NPN type with 4 pins.

The country of origin for this transistor is India.

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