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Nexperia Single Trench N-Channel MOSFET 320mA 60V Enhancement Mode 6-Pin SC-88 2N7002PS,115

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Nexperia Single Trench N-Channel MOSFET 320mA 60V Enhancement Mode 6-Pin SC-88 2N7002PS,115

Name: Nexperia Single Trench N-Channel MOSFET 320mA 60V Enhancement Mode 6-Pin SC-88 2N7002PS,115
Brand: Nexperia
SKU: 409645
Price: 0.11 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	Malaysia
Brand	Nexperia
Height	1mm
Length	2.2mm
Model	2N7002PS,115
Width	1.35mm
Mount Type	Surface
Series	Trench MOSFET
Maximum Operating Temperature	+150°C
Package Type	SC-88
Minimum Operating Temperature	-55°C
Pin Count	6
Number of Elements per Chip	1
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	320mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	420mW
Typical Gate Charge Qg @ Vgs	0.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Transistor Configuration	Single

Key Features

This MOSFET features a trench structure optimized for low gate charge and efficient switching.
It operates in enhancement mode with a maximum gate-source voltage of ±20V.
The device supports automotive standards AEC-Q101 enabling use in automotive electronics.
Compact dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height allow for space-saving designs.
Maximum power dissipation is 420 mW suitable for low power applications.
Typical gate charge is only 0.6 nC at Vgs, allowing fast switching with low losses.
Operating temperature ranges from -55°C to +150°C for wide environmental tolerance.
This transistor is suitable for surface mounting on PCBs in industrial and consumer electronics.

Product Description

Nexperia 2N7002PS,115 Single Trench N-Channel MOSFET is a low power transistor designed for efficient switching and amplification in electronic circuits. The device offers a maximum continuous drain current of 320mA and a maximum drain-source voltage of 60V within a compact 6-pin SC-88 surface mount package.

This enhancement mode transistor features a trench MOSFET architecture that reduces gate charge and drain-source resistance for improved efficiency. It complies with automotive grade AEC-Q101 standards, making it suitable for automotive and industrial applications requiring reliability under harsh conditions.

With a power dissipation rating of 420mW and operating temperature range from -55°C up to +150°C, the 2N7002PS,115 is resilient across a variety of environments. Its typical gate charge of 0.6nC supports rapid switching in DC-DC converters, load switching, and signal processing circuits.

The compact footprint (2.2 mm length, 1.35 mm width, 1 mm height) allows integration into tightly packed PCBs, optimizing board space in consumer electronics, communication devices, and automotive controls.

This MOSFET features a trench structure optimized for low gate charge and efficient switching. Operation in enhancement mode with ±20V maximum gate-source voltage. Compliant with AEC-Q101 automotive standard for high reliability.

Compact 6-pin SC-88 surface mount package dimensions. Wide temperature range for industrial and automotive suitability. Low maximum drain-source resistance of 2Ω. Maximum power dissipation of 420mW supporting low power applications.

Typical gate charge 0.6 nC facilitating fast switching.

This product is ideal for industrial, automotive, and consumer electronics requiring compact, reliable N-channel MOSFET switching devices. Browse the Nexperia MOSFET category on EnvMart for compatible transistors and complementary components.