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onsemi Small Signal PNP Transistor BC808-25LT1G, 500 mA, 25 V, 3-Pin SOT-23 Package BC808-25LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC808-25LT1G
Width 2.64mm
Mount Type Surface
Series BC808
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -25V
Minimum DC Current Gain hFE 160
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -30V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 500 mA ensures moderate power handling capability.
  • Maximum collector-emitter voltage rating of 25 V suitable for low-voltage switching applications.
  • Compact 3-pin SOT-23 surface mount package for space-saving PCB designs.
  • High current gain with minimum hFE of 160 supporting amplification needs.
  • Wide operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
  • Maximum power dissipation of 225 mW to handle typical signal level applications.
  • Fast transition frequency of 100 MHz ideal for high-frequency signal operation.
  • Automotive standard compliant to AEC-Q101 ensuring quality and reliability for automotive use.

Product Description

onsemi BC808-25LT1G is a high-quality small signal PNP bipolar junction transistor designed for various electronic applications. It supports a maximum DC collector current of 500 mA and features a collector-emitter voltage rating of 25 V, making it suitable for low power switching and amplification in electronic circuits.

The device is housed in a compact 3-pin SOT-23 surface mount package, facilitating densely packed PCB layouts in industrial, automotive, and consumer electronics.

With a minimum DC current gain (hFE) of 160, the BC808-25LT1G provides efficient amplification while operating reliably over a wide temperature range from -55°C to 150°C, ensuring durability under demanding environmental conditions.

The transistor has a maximum power dissipation rating of 225 mW and a high transition frequency (ft) of 100 MHz, enabling performance in high-frequency switching scenarios. This component meets the automotive standard AEC-Q101, ensuring that it complies with stringent automotive industry requirements for quality and reliability.

Physical dimensions measure 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height, making it compatible with modern compact circuit designs. Maximum DC collector current: 500 mA. Maximum collector-emitter voltage: 25 V.

Compact 3-pin SOT-23 package. Minimum DC current gain (hFE): 160. Operating temperature range: -55°C to 150°C. Maximum power dissipation: 225 mW. Transition frequency (ft): 100 MHz. Automotive standard: AEC-Q101 certified.

Dimensions: 3.04 mm x 2.64 mm x 1.11 mm.

This transistor is ideal for use in electronic circuits including industrial controls, automotive electronics, telecommunications, and consumer devices where reliable switching and amplification are required.

Explore more quality Bipolar Transistors and discrete semiconductor devices on EnvMart for your professional and industrial electronic needs.

onsemi Small Signal PNP Transistor BC808-25LT1G, 500 mA, 25 V, 3-Pin SOT-23 Package BC808-25LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

The collector-emitter voltage rating is 25 V, making it suitable for low-voltage applications.

It comes in a compact 3-pin SOT-23 surface mount package, which is ideal for space-saving PCB designs.

The minimum DC current gain (hFE) is 160, supporting efficient amplification needs.

This model operates over a wide temperature range from -55°C to 150°C, ensuring reliable performance in harsh environments.

The maximum power dissipation rating is 225 mW, suitable for typical signal level applications.

The transition frequency is 100 MHz, making it suitable for high-frequency signal operation.

Yes, it is compliant with the automotive standard AEC-Q101, ensuring quality and reliability for automotive applications.

The dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

It has a single transistor configuration, specifically a PNP type.

The maximum emitter-base voltage (VEBO) is -5 V.

The maximum collector-base voltage (VCBO) is -30 V.

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