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onsemi NPN Transistor 1 A 80 V 3-Pin SOT-223 Surface Mount BCP56T3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 7.3mm
Length 6.7mm
Model BCP56T3G
Width 1.75mm
Mount Type Surface
Series BCP56
Maximum Operating Temperature 150°C
Package Type SOT-223 (SC-73)
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 35MHz

Key Features

  • Designed for surface mount applications with a 3-pin SOT-223 package.
  • Maximum power dissipation of 1.5 W for reliable performance.
  • Maximum collector-base voltage of 100 V and emitter-base voltage of 5 V.
  • Operating temperature range from -65°C to 150°C for industrial use.
  • Provides a minimum DC current gain (hFE) of 40 ensuring efficient amplification.
  • Maximum transition frequency of 35 MHz suitable for switching applications.
  • Automotive qualified with AEC-Q101 standard compliance.

Product Description

The onsemi BCP56T3G is a general-purpose NPN bipolar transistor designed for surface mount applications featuring a compact 3-pin SOT-223 package. It supports a maximum DC collector current of 1 A and a maximum collector-emitter voltage rating of 80 V, making it suitable for a variety of medium-power switching and amplification tasks.

This transistor delivers a power dissipation capacity of 1.5 W, allowing stable operation within demanding environments. Its maximum collector-base voltage of 100 V and emitter-base voltage of 5 V provide robustness for circuit designs needing high voltage tolerance.

The BCP56T3G operates reliably over a wide temperature range from -65°C to 150°C, meeting the requirements of industrial, automotive, and commercial electronics sectors. It guarantees a minimum DC current gain of 40, affording efficient signal amplification, and a maximum transition frequency of 35 MHz suitable for moderate frequency switching applications.

The compact package dimensions contribute to space-efficient PCB designs. Surface mount assembly with 3-pin SOT-223 package. Maximum power dissipation: 1.5 W. Collector current: 1 A maximum. Collector-emitter voltage: 80 V maximum.

High transition frequency of 35 MHz. Automotive-grade AEC-Q101 qualification. Wide operating temperature range: -65°C to 150°C. Compact physical dimensions enable integration into dense circuits.

This onsemi transistor is ideal for industrial automation, consumer electronics, automotive electronics, and general-purpose amplification and switching applications. It supports efficient and reliable circuit design in demanding operational conditions. Explore more high-quality Bipolar Transistors and semiconductor components in the EnvMart catalog.

onsemi NPN Transistor 1 A 80 V 3-Pin SOT-223 Surface Mount BCP56T3G
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Frequently Asked Questions

The maximum collector-emitter voltage rating of the BCP56T3G is 80 V.

This model has a maximum power dissipation capacity of 1.5 W.

The BCP56T3G operates over a wide temperature range from -65°C to 150°C.

The maximum DC collector current for the BCP56T3G is 1 A.

It provides a minimum DC current gain (hFE) of 40, ensuring efficient amplification.

The maximum transition frequency for this model is 35 MHz, suitable for moderate frequency switching applications.

This transistor uses a 3-pin SOT-223 package type.

The dimensions of this model are 6.7 mm in length, 1.75 mm in width, and 7.3 mm in height.

Yes, it is automotive qualified with AEC-Q101 standard compliance.

The maximum collector-base voltage (VCBO) for the BCP56T3G is 100 V.

The maximum emitter-base voltage (VEBO) is 5 V.

This transistor is suitable for industrial automation, consumer electronics, automotive electronics, and general-purpose amplification and switching applications.

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