Infineon 650 V 20 A Surface Mount Schottky Barrier Diode TO-263 Package 10-Pin IDDD20G65C6XTMA1

Infineon IDDD20G65C6XTMA1 is a high-performance Schottky Barrier Diode designed for surface mounting with a TO-263 package and 10-pin configuration. It supports a maximum continuous forward current of 20 amperes and a peak reverse repetitive voltage of 650 volts, making it suitable for demanding power applications.

The diode operates efficiently with a low forward voltage drop of 1.25 volts, minimizing conduction losses. It functions reliably in temperatures ranging from -55°C to 175°C, suitable for harsh industrial, commercial, and telecom environments. The component supports a high peak non-repetitive forward surge current of 99 amperes and maintains a very low peak reverse leakage current of 2 microamperes.

Engineered with Infineon's CoolSiC™ generation 6 technology, this Schottky diode offers best-in-class forward voltage and excellent figure of merit, as well as high dv/dt ruggedness of 150 V/ns. This makes it ideal for use in power switching applications like switch-mode power supplies (SMPS), solar power inverters, server power circuits, and telecom power modules.

The D2PAK (TO-263) double DPAK top-side cooled surface mount package enables efficient thermal management, helping maintain performance during high power operations. Compliance with JEDEC standards J-STD20 and JESD22 ensures this diode meets industry reliability and quality benchmarks.

This diode features a maximum continuous forward current of 20 amperes. It supports a peak reverse repetitive voltage of 650 volts. The maximum forward voltage drop is 1.25 volts, ensuring efficient conduction. It has a 10-pin configuration in a D2PAK (TO-263) surface mount package.

Operating temperature ranges from -55°C to 175°C for versatile environments. The peak non-repetitive forward surge current is 99 amperes. Low peak reverse current of 2 microamperes reduces leakage losses. Complies with JEDEC standards J-STD20 and JESD22 for reliability and quality.

Specifically designed for high power applications such as power supplies, solar inverters, servers, and telecom equipment. Incorporates Infineon's CoolSiC™ generation 6 technology for superior dv/dt ruggedness of 150 V/ns.

This high-quality Schottky Barrier Diode is ideal for engineers and designers working in industrial, laboratory, telecommunications, and renewable energy sectors. EnvMart offers this product as part of its extensive semiconductor components category, facilitating efficient and reliable power circuit designs.