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Vishay Schottky Barrier Diode 60 V 6 A Surface Mount TO-252 Package V6PWM60HM3/I
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | V6PWM60HM3/I |
| Mount Type | Surface |
| Series | eSMP |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 6A |
| Peak Reverse Repetitive Voltage Vrrm | 60V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 0.51V |
Key Features
- Utilizes trench MOS barrier Schottky technology for high efficiency.
- Designed for low voltage, high frequency DC/DC converters and freewheeling diode applications.
- Low forward voltage drop of 0.51 V reduces power losses.
- Operating temperature range from -40°C to 175°C for robust performance.
- Complies with RoHS standards ensuring environmental safety.
- Meets automotive standard AEC-Q101 for enhanced reliability.
- Single diode configuration suitable for polarity protection applications.
- Peak non-repetitive forward surge current rating of 100 A.
Product Description
Vishay V6PWM60HM3/I Schottky Barrier Diode offers reliable semiconductor performance with a maximum continuous forward current of 6 A and peak reverse repetitive voltage of 60 V. The device is packaged in a low profile TO-252 surface mount format with a typical height of 1.3 mm, making it ideal for compact electronic designs.
This diode employs trench MOS Schottky technology, which ensures low forward voltage drop and high efficiency, reducing heat dissipation and power loss during operation. The device is optimized for use in low voltage, high frequency DC/DC converters, freewheeling diode circuits, and polarity protection roles.
Operational temperatures range from -40°C up to 175°C, enhancing its suitability for industrial, automotive, and commercial electronics applications. It complies with RoHS directives, and meets AEC-Q101 automotive standards, ensuring robust performance in harsh environments.
Key technical features include a maximum forward voltage of 0.51 V, a peak non-repetitive forward surge current of 100 A, and a single diode configuration. The device also meets MSL level 1 per J-STD-020 with a low maximum peak reflow temperature, facilitating automated PCB assembly processes.
Utilizes trench MOS barrier Schottky technology for high efficiency. Designed for low voltage, high frequency DC/DC converters and freewheeling diode applications. Low forward voltage drop of 0.51 V reduces power losses.
Operating temperature range from -40°C to 175°C for robust performance. Complies with RoHS standards ensuring environmental safety. Meets automotive standard AEC-Q101 for enhanced reliability. Single diode configuration suitable for polarity protection applications.
Peak non-repetitive forward surge current rating of 100 A.
This product is well-suited for semiconductor replacement in electronics manufacturing, laboratory, automotive, industrial electronics, and power management sectors. Use EnvMart's comprehensive electronics category to find additional Vishay semiconductor components optimized for your applications.
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Frequently Asked Questions
The maximum continuous forward current of the Vishay V6PWM60HM3/I is 6 A.
This model has a peak reverse repetitive voltage rating of 60 V.
The maximum forward voltage drop for this diode is 0.51 V.
The operating temperature range for the Vishay V6PWM60HM3/I is from -40°C to 175°C.
It is packaged in a TO-252 surface mount format.
This diode meets the AEC-Q101 automotive standard, ensuring enhanced reliability.
The peak non-repetitive forward surge current rating is 100 A.
Yes, it complies with RoHS standards, ensuring environmental safety.
This model is designed for low voltage, high frequency DC/DC converters and freewheeling diode applications, as well as polarity protection.
The Vishay V6PWM60HM3/I features a single diode configuration.
It utilizes trench MOS barrier Schottky technology for high efficiency and low forward voltage drop.
The country of origin for the Vishay V6PWM60HM3/I is India.
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