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Toshiba Junction Type N-Channel Audio Frequency Low Noise Amplifier Transistor 10 V 14 mA 2SK209-GR(TE85L,F)
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Model | 2SK209-GR(TE85L,F) |
| Series | 2SK209 |
| Configuration | Junction Type |
| Maximum Operating Temperature | 125°C |
| Package Type | S-MINI |
| Sub Type | Audio Frequency Low Noise Amplifier |
| Minimum Operating Temperature | 25°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Drain Source Voltage Vds | 10V |
| Maximum Power Dissipation Pd | 150mW |
| Maximum Gate Source Voltage Vgs | -50V |
| Drain Source Current Ids | 14 mA |
Key Features
- Constructed from high-quality silicon material ensuring reliable performance.
- Designed for low noise audio frequency amplification applications.
- Maximum drain-source voltage of 10 V suitable for low-voltage circuits.
- Maximum drain current of 14 mA for efficient current handling.
- Compact S-MINI package enabling space-saving PCB designs.
- Operates safely within a temperature range of 25°C to 125°C.
- Maximum power dissipation of 150 mW ensuring durability in typical amplifier circuits.
- Junction type configuration for N-channel functionality.
Product Description
Toshiba 2SK209-GR(TE85L,F) is a Junction Type N-Channel field-effect transistor made of silicon, specifically designed as an audio frequency low noise amplifier transistor. This transistor is ideal for low noise amplification in audio applications, providing high performance at 10 V maximum drain-source voltage and a maximum drain current of 14 mA.
The transistor comes in a compact S-MINI package that is suitable for space-constrained electronic equipment. It supports an operating temperature range from 25°C to 125°C and offers a maximum power dissipation of 150 mW, making it robust enough for typical audio amplifier circuits.
This component features a junction type configuration and has 3 pins, allowing for easy and direct integration into amplifier circuits. It complies with RoHS standards, reflecting its environmentally responsible manufacturing.
Applications for this transistor include industrial audio frequency low noise amplifiers, electronic components manufacturing, and various amplifier designs requiring reliable, low-noise performance.
Constructed from high-quality silicon material ensuring reliable performance. Designed for low noise audio frequency amplification applications. Maximum drain-source voltage of 10 V suitable for low-voltage circuits. Maximum drain current of 14 mA for efficient current handling.
Compact S-MINI package enabling space-saving PCB designs. Operates safely within a temperature range of 25°C to 125°C. Maximum power dissipation of 150 mW ensuring durability in typical amplifier circuits. Junction type configuration for N-channel functionality.
Pin count of 3 facilitating simple circuit integration. RoHS compliant ensuring environmental safety. Explore EnvMart’s collection of semiconductor Transistors for reliable, high-quality audio amplification components.
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Frequently Asked Questions
The maximum drain-source voltage of the Toshiba 2SK209-GR(TE85L,F) transistor is 10 V, making it suitable for low-voltage circuits.
This transistor can handle a maximum drain current of 14 mA, allowing for efficient current handling in audio applications.
It operates safely within a temperature range of 25°C to 125°C, suitable for various environmental conditions.
The Toshiba 2SK209-GR(TE85L,F) comes in a compact S-MINI package, which is ideal for space-saving PCB designs.
This model features a pin count of 3, facilitating simple integration into amplifier circuits.
The maximum power dissipation for this model is 150 mW, ensuring it can handle typical amplifier circuit demands.
It utilizes a junction type configuration, specifically designed for N-channel functionality.
Yes, the Toshiba 2SK209-GR(TE85L,F) is RoHS compliant, reflecting its environmentally responsible manufacturing.
This transistor is designed for low noise audio frequency amplification applications, including industrial audio amplifiers and various amplifier designs.
The minimum operating temperature for this transistor is 25°C, allowing it to function in a variety of conditions.
The maximum gate-source voltage for the Toshiba 2SK209-GR(TE85L,F) is -50 V, which is important for circuit design considerations.
This transistor is constructed from high-quality silicon material, ensuring reliable performance in audio applications.
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