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Infineon RF Bipolar Transistor NPN 250 mA, 5 V, 4-Pin SOT-89 BFQ790H6327XTSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2mm |
| Length | 4.5mm |
| Model | BFQ790H6327XTSA1 |
| Width | 2.5mm |
| Mount Type | Surface |
| Series | BFQ790 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 5V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 2V |
| Maximum Collector Base Voltage VCBO | 6.1V |
| Maximum Power Dissipation Pd | 1.5W |
| Maximum DC Collector Current Idc | 250mA |
| Transistor Configuration | NPN |
| Maximum Transition Frequency ft | 1.85GHz |
Key Features
- This transistor features high linearity and high gain driver amplifier suitable for RF applications.
- It utilizes silicon germanium technology ensuring effective signal amplification.
- Designed for surface mounting in a compact 4-Pin SOT-89 package.
- Operates within a temperature range from -55°C to 150°C for reliable industrial use.
- Maximum power dissipation rating of 1.5 W supports moderate power applications.
- High maximum transition frequency of 1.85 GHz enhances performance in high frequency circuits.
- Collector base voltage rating up to 6.1 V provides robust electrical tolerance.
- Compact dimensions of 4.5 mm length, 2.5 mm width, and 2 mm height allow for space-constrained PCB designs.
Product Description
Infineon BFQ790H6327XTSA1 is a RF Bipolar Transistor with an NPN configuration, capable of handling a maximum DC collector current of 250 mA and collector emitter voltage of 5 V. It comes in a 4-Pin SOT-89 surface mount package with dimensions 4.5 mm (length) by 2.5 mm (width) by 2 mm (height).
This transistor is engineered using silicon germanium technology optimized for high gain and linearity, ideal for RF driver amplifier stages in commercial and industrial wireless infrastructure.
It supports a maximum power dissipation of 1.5 W and has a maximum transition frequency of 1.85 GHz, making it suitable for medium power amplifiers, ISM band applications, UHF television, CATV, and DBS systems.
The device offers a minimum DC current gain (hFE) of 60 and operates reliably across a wide temperature range from -55°C to 150°C, accommodating demanding industrial environments.
Planned for applications including wireless communication, automated test equipment, and medium power RF amplification, it assures high compression point performance and high maximum RF input power tolerance.
High linearity and gain suitable for RF amplifier stages. Silicon germanium technology for enhanced performance. Compact 4-Pin SOT-89 surface mount package. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 1.5 W.
High transition frequency of 1.85 GHz. Robust voltage and current ratings for reliable operation. Compatible with wireless infrastructure and test equipment applications. This product is new and sourced from India. For additional information and similar Bipolar Transistors, browse the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum DC collector current rating of this NPN transistor is 250 mA.
This model supports a maximum power dissipation of 1.5 W.
The maximum transition frequency of this transistor is 1.85 GHz, enhancing its performance in high frequency circuits.
The transistor comes in a compact 4-Pin SOT-89 package with dimensions of 4.5 mm in length, 2.5 mm in width, and 2 mm in height.
It operates reliably within a temperature range from -55°C to 150°C, suitable for industrial applications.
The collector-emitter voltage rating for this transistor is up to 5 V.
The minimum DC current gain (hFE) for this model is 60.
This transistor is designed for surface mounting, making it suitable for compact PCB designs.
It is suitable for applications in wireless communication, automated test equipment, and medium power RF amplification.
The maximum collector-base voltage rating for this transistor is 6.1 V.
It utilizes silicon germanium technology, which enhances its performance in RF applications.
This product is sourced from India.
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