onsemi Digital Transistor 800 V NPN Through Hole TO-262 3-Pin FJI5603DTU

onsemi FJI5603DTU digital transistor is a high voltage NPN silicon transistor designed for power switching and general electronic applications. It features a TO-262 package with through hole mounting and 3 pins, making it ideal for electronic ballast and various industrial circuits requiring efficient switching of up to 800 V collector-emitter voltage.

The transistor offers a wide safe operating area with a maximum power dissipation of 100 W, ensuring reliable operation under demanding conditions. Its built-in free wheeling diode reduces switching losses, and it maintains a small variance in storage time to support high-speed switching tasks.

With a minimum DC current gain (hFE) of 20 and maximum operating temperature of 150°C, the FJI5603DTU is suited for use in automotive systems compliant with AEC-Q101 standards and other industrial environments. The transistor's compact form factor (10.29 mm length, 9.65 mm width, 4.83 mm height) allows easy integration into PCBs using through hole mounting.

This digital transistor is made in China and features excellent electrical characteristics including maximum collector-base voltage of 1600 V, maximum emitter-base voltage of 12 V, and transistor configuration optimized for single switch applications. Its robust design supports diverse electronics manufacturing and industrial automation applications.

Maximum collector-emitter voltage of 800 V supports high voltage circuits. NPN transistor polarity suitable for general switching applications. Through hole mount type ensures secure PCB assembly. Maximum power dissipation rated at 100 W allows effective thermal handling.

Features built-in free wheeling diode enhancing switching performance. Wide safe operating area and small storage time variance improve reliability. Maximum operating temperature of 150°C enables robust industrial use. Pin count of 3 pins standard for transistor configuration.

Designed to meet AEC-Q101 automotive standard for quality. Compact dimensions with length 10.29mm, width 9.65mm, and height 4.83mm.

Ideal for industrial, automotive, and electronic ballast applications, this onsemi digital transistor combines high power capability with reliable operation. Browse more semiconductor products on EnvMart to find complementary components and accessories.

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