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onsemi Dual PNP Bipolar Transistor BC856BDW1T1G, 200 mA, 65 V, 6-Pin SOT-363 Surface Mount BC856BDW1T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.1mm
Length 2.2mm
Model BC856BDW1T1G
Width 1.35mm
Mount Type Surface
Series BC856BDW1
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 300
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Dual
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for low power surface mount applications with a dual PNP transistor configuration.
  • Maximum DC collector current is 200 mA, making it suitable for general purpose amplifier circuits.
  • Maximum collector-emitter voltage of 65 V and collector-base voltage of 80 V for robust operation.
  • High minimum DC current gain of 300 ensures effective amplification performance.
  • Operating temperature range from -65°C to 150°C supports varied industrial environments.
  • Maximum power dissipation of 380 mW enables reliable heat management in compact designs.
  • Package dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height maintain a small footprint.
  • Meets automotive standard AEC-Q101 for high reliability in demanding applications.

Product Description

onsemi BC856BDW1T1G is a dual PNP bipolar transistor designed specifically for general-purpose amplifier applications and housed in a 6-pin SOT-363 surface mount package. It supports a maximum DC collector current of 200 mA and withstands collector-emitter voltages up to 65 V, allowing reliable performance in low power electronic circuits.

The transistor features a high minimum DC current gain (hFE) of 300, contributing to efficient amplification in both industrial and commercial electronics. Its compact physical dimensions of 2.2 mm (length), 1.35 mm (width), and 1.1 mm (height) make it highly suitable for dense PCB layouts.

Designed for surface mount technology, the BC856BDW1T1G comes with a standard SOT-363 package, enabling ease of automated assembly. It also fulfills automotive quality standards (AEC-Q101), underlining its reliability for automotive and other demanding environments.

The device operates efficiently within a wide temperature range from -65°C to 150°C and dissipates up to 380 mW of power safely. It supports a maximum transition frequency (ft) of 100 MHz, making it compatible with medium frequency switching and amplification.

This transistor is Pb-free and complies with halogen and bromine-free standards, supporting environmentally responsible electronics manufacturing. Dual PNP bipolar transistor configuration optimized for amplification. 200 mA maximum DC collector current.

Collector-emitter voltage rating of 65 V and collector-base voltage of 80 V. High DC current gain for effective signal amplification. Wide operating temperature range from -65°C to 150°C. Compact SOT-363 6-pin surface mount package.

Compliance with AEC-Q101 automotive standards for durability. Maximum power dissipation of 380 mW for stable operation. 100 MHz maximum transition frequency for medium-frequency applications.

This transistor is ideal for industrial, automotive, commercial, and manufacturing electronic circuits requiring reliable low power switching and amplification. Its small size and surface mount design facilitate use in dense electronic assemblies and modern PCB technologies.

Explore more semiconductor components and Bipolar Transistors in the Electronics & Electricals category at EnvMart for your next project.

onsemi Dual PNP Bipolar Transistor BC856BDW1T1G, 200 mA, 65 V, 6-Pin SOT-363 Surface Mount BC856BDW1T1G
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