Nexperia P-Channel MOSFET, Surface Mount SOT-23 Package, 1.5 A, 40 V, Enhancement Mode PMV250EPEAR

Nexperia PMV250EPEAR is a P-Channel MOSFET designed for surface mounting with a compact SOT-23 3-pin package. It delivers a maximum continuous drain current of 1.5 A and a drain-source voltage rating of 40 V making it well suited for a wide range of electronic and automotive power switching applications.

The device operates in enhancement mode and supports power dissipation up to 6.25 W, allowing it to handle moderate power tasks efficiently. With a low maximum drain-source resistance of 240 mΩ, it ensures minimal conduction losses, enhancing overall circuit efficiency.

Designed to perform reliably across a broad temperature range from -55°C to 150°C, it meets the stringent automotive AEC-Q101 standards, ensuring durability and high quality for rigorous industrial environments.

The maximum gate-source voltage capability of -20 V to +20 V allows adaptability in gate drive voltages, complemented by a typical gate charge of 4.7 nC at Vgs voltage, which supports efficient switching characteristics with reduced delay.

Compact physical dimensions of 3 mm length, 1.4 mm width, and 1 mm height facilitate integration within small form factor devices and printed circuit boards. The forward voltage of -1.2 V contributes to reduced power losses during operation.

This MOSFET transistor is ideal for industrial, automotive, and power management applications where efficient and reliable switching performance is critical. Its surface-mount design supports automated assembly and enhanced production efficiency.

The device features a compact 3-pin SOT-23 package suitable for surface mounting. It supports a maximum power dissipation of 6.25 W for reliable operation. The maximum drain-source resistance is 240 mΩ ensuring efficient conduction.

The MOSFET operates within a temperature range from -55°C to 150°C suitable for automotive and industrial applications. This transistor complies with automotive AEC-Q101 standards for quality and reliability. Maximum gate-source voltage ranges between -20 V and +20 V allowing flexible gate drive.

It provides a typical gate charge of 4.7 nC at Vgs which benefits switching performance. The transistor’s dimensions are compact at 3 mm length, 1.4 mm width, and 1 mm height. The forward voltage is -1.2 V ensuring low forward conduction losses.

This enhancement mode MOSFET is designed for efficient power switching in electronic circuits.

Explore more products from Nexperia and similar MOSFETs and discrete semiconductors on EnvMart to meet your application needs in electronics manufacturing, automotive electronics, and power management systems.