Nexperia P-Channel MOSFET, 1.5 A, 40 V Enhancement Type, 3-Pin SOT-23 PMV250EPEAR

Nexperia PMV250EPEAR is a P-Channel MOSFET transistor designed for efficient switching and amplification in electronic circuits, rated for a maximum continuous drain current of 1.5 A and a maximum drain-source voltage of 40 V. It features an enhancement mode channel type and is housed in a compact 3-pin SOT-23 surface mount package, suitable for slim PCB designs.

This MOSFET offers low on-resistance of 240 milliohms ensuring low power losses and enhanced energy efficiency in power management applications. The device supports operation in a wide temperature range from -55°C to +150°C, making it reliable for industrial and automotive environments.

The typical gate charge of 4.7 nC at Vgs promotes fast switching speeds, beneficial in PWM circuits and DC-DC converter designs. It complies with the AEC-Q101 automotive standard, assuring quality and durability for automotive systems.

Compact SOT-23 package for space-saving PCB layouts. Maximum continuous drain current 1.5 A for moderate power applications. Low drain-source resistance Rds(on) of 240 mΩ to minimize conduction losses. Wide operating temperature range from -55°C to 150°C enhances versatility.

Typical gate charge of 4.7 nC supports fast switching operations. Maximum power dissipation of 6.25 W for effective thermal handling. P-Channel, enhancement mode MOSFET suitable for high-side switching. AEC-Q101 qualification for reliable automotive use.

Forward voltage -1.2 V ensuring efficient conduction characteristics.

This component is extensively used in power management modules, portable electronics, automotive electronics, and circuit protection designs. Its compact size and efficient performance make it ideal for industrial, manufacturing, and consumer electronic applications requiring surface-mount technology.

Explore our full range of semiconductor MOSFETs for diverse electronic design requirements at EnvMart.