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Nexperia 5-Element Uni-Directional ESD Protection Diode 25 W, 6-Pin UMT PESD3V3L5UY,115

Category ESD Protection Diode Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 2.2mm
Model PESD3V3L5UY,115
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type UMT
Minimum Operating Temperature -65°C
Pin Count 6
Number of Elements per Chip 5
Clamping Voltage VC 12V
Diode Configuration Common Anode
Direction Type Uni-Directional
Minimum Breakdown Voltage Vbr 5.3V
Maximum Reverse Stand-off Voltage Vwm 3.3V
Peak Pulse Power Dissipation Pppm 25W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 2.5A
Maximum Reverse Leakage Current 300nA

Key Features

  • The diode features a common anode configuration ensuring uni-directional ESD protection.
  • It is designed for surface mounting with a compact UMT package measuring 2.2mm x 1.35mm x 1mm.
  • The device supports a minimum breakdown voltage of 5.3 volts and a maximum reverse stand-off voltage of 3.3 volts.
  • It withstands peak pulse currents up to 2.5 amperes with a clamping voltage of 12 volts for effective surge limiting.
  • Operates reliably across a wide temperature range from -65°C to 150°C.
  • Maximum reverse leakage current is limited to 300 nanoamperes to ensure low power loss.
  • Specifically designed for electrostatic discharge protection in sensitive electronic circuits.
  • The diode array contains 5 elements per chip to guard against multiple transient events.

Product Description

Nexperia PESD3V3L5UY,115 is a 5-element uni-directional ESD protection diode array designed for safeguarding electronic components from electrostatic discharge events. Packaged in a 6-pin UMT surface mount type, it offers a peak pulse power dissipation of 25 watts ensuring robust transient voltage suppression across sensitive circuitry.

This diode features a common anode configuration optimized for uni-directional protection, making it suitable for various semiconductor and discrete electronic applications. Its compact dimensions - 2.2 mm in length, 1.35 mm in width, and 1 mm in height - allow for flexible PCB layout and space-efficient designs.

The diode supports a minimum breakdown voltage (Vbr) of 5.3 volts, with a maximum reverse stand-off voltage (Vwm) of 3.3 volts. It is capable of handling peak pulse currents (Ippm) up to 2.5 amperes and maintains a clamping voltage (VC) of 12 volts to effectively limit transient surges.

Designed to operate reliably within temperatures ranging from -65°C to 150°C, it maintains low maximum reverse leakage current capped at 300 nanoamperes, improving power efficiency and circuit stability.

The 5-element array configuration allows multiple transient events to be absorbed, providing enhanced protection in electronic industrial equipment, semiconductor manufacturing, telecommunications, automotive electronics, and consumer devices.

Due to its high surge capability and compact UMT package, this ESD Protection Diode is ideal for applications requiring compliance with stringent electrostatic discharge standards without compromising board real estate.

The diode features a common anode configuration ensuring uni-directional ESD protection. Designed for surface mounting in a compact UMT package. Supports a minimum breakdown voltage of 5.3 V and max reverse stand-off voltage of 3.3 V.

Can handle peak pulse currents up to 2.5 A with 25 W peak pulse power dissipation. Wide operating temperature range from -65°C to 150°C for industrial reliability. Low maximum reverse leakage current of 300 nA. Contains 5 elements per chip for multi-event transient protection.

Ideal for use in semiconductor, telecommunications, automotive, and consumer electronics. Explore the Electronics & Electricals section on EnvMart for high-quality semiconductor and ESD protection components from reputed brands like Nexperia.

Nexperia 5-Element Uni-Directional ESD Protection Diode 25 W, 6-Pin UMT PESD3V3L5UY,115
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Frequently Asked Questions

The diode has a peak pulse power dissipation of 25 watts, ensuring effective transient voltage suppression.

The minimum breakdown voltage for this model is 5.3 volts, providing a threshold for ESD protection.

The maximum reverse stand-off voltage is 3.3 volts, which helps in protecting sensitive components from overvoltage conditions.

This diode array contains 5 elements per chip, allowing it to absorb multiple transient events effectively.

It can handle peak pulse currents up to 2.5 amperes, providing robust protection against surges.

The dimensions of this diode are 2.2 mm in length, 1.35 mm in width, and 1 mm in height, allowing for compact PCB layouts.

The clamping voltage is 12 volts, which helps to limit the voltage during transient events.

It operates reliably across a wide temperature range from -65°C to 150°C, suitable for various industrial applications.

The maximum reverse leakage current is limited to 300 nanoamperes, ensuring low power loss during operation.

This model is designed for surface mounting, making it suitable for compact electronic designs.

It features a common anode configuration, ensuring uni-directional ESD protection for sensitive circuits.

This diode is specifically designed for electrostatic discharge protection in semiconductor, telecommunications, automotive electronics, and consumer devices.

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