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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 2.2mm |
| Model | PESD3V3L5UY,115 |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | UMT |
| Minimum Operating Temperature | -65°C |
| Pin Count | 6 |
| Number of Elements per Chip | 5 |
| Clamping Voltage VC | 12V |
| Diode Configuration | Common Anode |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 5.3V |
| Maximum Reverse Stand-off Voltage Vwm | 3.3V |
| Peak Pulse Power Dissipation Pppm | 25W |
| Test Current It | 1mA |
| Maximum Peak Pulse Current Ippm | 2.5A |
| Maximum Reverse Leakage Current | 300nA |
Nexperia PESD3V3L5UY,115 is a 5-element uni-directional ESD protection diode array designed for safeguarding electronic components from electrostatic discharge events. Packaged in a 6-pin UMT surface mount type, it offers a peak pulse power dissipation of 25 watts ensuring robust transient voltage suppression across sensitive circuitry.
This diode features a common anode configuration optimized for uni-directional protection, making it suitable for various semiconductor and discrete electronic applications. Its compact dimensions - 2.2 mm in length, 1.35 mm in width, and 1 mm in height - allow for flexible PCB layout and space-efficient designs.
The diode supports a minimum breakdown voltage (Vbr) of 5.3 volts, with a maximum reverse stand-off voltage (Vwm) of 3.3 volts. It is capable of handling peak pulse currents (Ippm) up to 2.5 amperes and maintains a clamping voltage (VC) of 12 volts to effectively limit transient surges.
Designed to operate reliably within temperatures ranging from -65°C to 150°C, it maintains low maximum reverse leakage current capped at 300 nanoamperes, improving power efficiency and circuit stability.
The 5-element array configuration allows multiple transient events to be absorbed, providing enhanced protection in electronic industrial equipment, semiconductor manufacturing, telecommunications, automotive electronics, and consumer devices.
Due to its high surge capability and compact UMT package, this ESD Protection Diode is ideal for applications requiring compliance with stringent electrostatic discharge standards without compromising board real estate.
The diode features a common anode configuration ensuring uni-directional ESD protection. Designed for surface mounting in a compact UMT package. Supports a minimum breakdown voltage of 5.3 V and max reverse stand-off voltage of 3.3 V.
Can handle peak pulse currents up to 2.5 A with 25 W peak pulse power dissipation. Wide operating temperature range from -65°C to 150°C for industrial reliability. Low maximum reverse leakage current of 300 nA. Contains 5 elements per chip for multi-event transient protection.
Ideal for use in semiconductor, telecommunications, automotive, and consumer electronics. Explore the Electronics & Electricals section on EnvMart for high-quality semiconductor and ESD protection components from reputed brands like Nexperia.
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