onsemi Bipolar Transistor PNP 500 mA 300 V TO-225 Package Through Hole MJE350G

The onsemi MJE350G Bipolar Transistor is a high-voltage, medium current PNP transistor packaged in a TO-225 through hole mount format. It is suitable for a wide range of electronic applications requiring up to 500 mA collector current and 300 V voltage tolerance. This transistor supports efficient and reliable operation in power amplification and switching circuits.

Engineered with a maximum power dissipation rating of 20 watts, this device withstands demanding electrical loads while maintaining stable performance across an operating temperature range of -65°C to 150°C. The minimum DC current gain (hFE) of 30 ensures good gain characteristics facilitating signal amplification.

Physical dimensions of the transistor (8.3 mm length, 3.45 mm width, and 27.26 mm height) allow easy installation on printed circuit boards with through hole mounting requirements. Its single transistor configuration with PNP polarity is optimized for discrete semiconductor applications.

The MJE350 series by onsemi represents reliable semiconductor components used extensively in industrial controls, power regulation, and electronic device manufacturing. Although this unit lacks specific automotive qualification, it is suitable for various commercial and industrial electronics implementations.

The transistor's 3-pin TO-225 package type offers robust mechanical and thermal characteristics supporting long-term use in electric circuits. Its high voltage ratings of 300 V collector emitter and collector base voltage make it ideal for circuits subject to high voltage stresses.

Package contents include one onsemi MJE350G Bipolar Transistor, providing a ready solution for electronics engineers and technicians. Leveraging onsemi's manufacturing standards, this component meets rigorous quality and functional testing.

This transistor has a maximum DC collector current rating of 500 mA for reliable performance. The maximum collector emitter voltage rating is 300 V ensuring high voltage handling capability. The device is packaged in a TO-225 3-pin package suitable for through hole mounting.

It has a transistor polarity of PNP and a single transistor configuration. Maximum power dissipation capability of 20 watts supports various power electronic applications. The minimum DC current gain (hFE) is rated at 30 for efficient amplification.

Operating temperature ranges from -65°C minimum to a maximum of 150°C for versatile environmental tolerance. Physical dimensions include length of 8.3 mm, width of 3.45 mm, and height of 27.26 mm. Maximum collector base voltage and collector emitter voltage are both rated at 300 V for stable switching.

Designed without automotive certification, it is suitable for general industrial and commercial electronic uses. Explore more onsemiconductor Bipolar Transistors and other discrete semiconductor components in the Electronics & Electricals section on EnvMart.