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onsemi Bipolar Transistor NPN 50 mA, 300 V, 4-Pin SOT-223 PZTA42T1G

Category Bipolar Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model PZTA42T1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 300V
Minimum DC Current Gain hFE 25
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc 50mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz
Nexperia PZTA42,115 Transistor, 100 mA NPN, 300 V, 4-Pin SOT-223Brand Nexperia
onsemi NSV40301MZ4G NPN Transistor, 3 A, 40 V, 3 + Tab-Pin SOT-223Brand ON Semiconductor

Key Features

  • This transistor operates with a collector-emitter voltage of up to 300 V.
  • Maximum power dissipation is rated at 1.5 W for reliable usage.
  • Designed for surface mounting with a compact SOT-223 package type.
  • It features a minimum DC current gain (hFE) of 25, ensuring amplification performance.
  • Suitable for operation in a temperature range from -65°C to 150°C.
  • Maximum transition frequency of 50 MHz allows for high-frequency applications.
  • It complies with the automotive standard AEC-Q101, assuring quality and reliability.
  • Compact dimensions are 6.7 mm length, 3.7 mm width, and 1.75 mm height.

Product Description

The onsemi PZTA42T1G is a high-quality NPN Bipolar Transistor designed for discrete semiconductor applications, capable of handling up to 50 mA collector current and withstanding collector-emitter voltages up to 300 V. Packaged in a 4-pin SOT-223 surface mount package, this transistor combines performance and compactness for industrial and automotive uses.

Featuring a maximum power dissipation of 1.5 W and a minimum current gain of 25, it offers reliable amplification in various electronic circuits. The transistor operates efficiently across a wide temperature range from -65°C to 150°C, making it suitable for harsh environments and automotive electronics, backed by compliance with the AEC-Q101 automotive standard.

Its maximum transition frequency of 50 MHz enables functioning in moderately high-frequency scenarios. The compact dimensions of 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height further contributes to space-saving designs.

This transistor is primarily used in amplification, switching, and signal processing within industrial, automotive, manufacturing, and electronic control systems. Its single transistor configuration and NPN polarity make it versatile for a variety of electronic component assemblies.

This transistor operates with a collector-emitter voltage of up to 300 V. Maximum power dissipation is rated at 1.5 W for reliable usage. Designed for surface mounting with a compact SOT-223 package type. It features a minimum DC current gain (hFE) of 25, ensuring amplification performance.

Suitable for operation in a temperature range from -65°C to 150°C. Maximum transition frequency of 50 MHz allows for high-frequency applications. It complies with the automotive standard AEC-Q101, assuring quality and reliability.

Compact dimensions are 6.7 mm length, 3.7 mm width, and 1.75 mm height. Explore the Electronics & Electricals category for more semiconductor solutions on EnvMart.

onsemi Bipolar Transistor NPN 50 mA, 300 V, 4-Pin SOT-223 PZTA42T1G
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Frequently Asked Questions

The maximum collector-emitter voltage for this transistor is 300 V.

This model has a maximum power dissipation rating of 1.5 W.

It operates efficiently within a temperature range of -65°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 25.

The maximum transition frequency is 50 MHz, allowing for high-frequency applications.

It comes in a compact 4-pin SOT-223 surface mount package.

The dimensions of this transistor are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

The maximum DC collector current for this model is 50 mA.

This transistor complies with the automotive standard AEC-Q101, ensuring quality and reliability.

The transistor has an NPN polarity.

It is suitable for amplification, switching, and signal processing in various electronic circuits, particularly in industrial and automotive applications.

The maximum emitter-base voltage (VEBO) for this transistor is 6 V.

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