STMicroelectronics High Voltage PNP Bipolar Transistor STN9360, -500 mA, -600 V, 3-Pin SOT-223

STMicroelectronics STN9360 is a high voltage PNP bipolar transistor designed for electronic circuits requiring high voltage and moderate current handling capabilities. It supports a maximum DC collector current of -500 mA and a maximum collector-emitter voltage of -600 V, making it suitable for power switching and amplification tasks in industrial, automotive, and power management applications.

The device is packaged in a 3-pin SOT-223 surface-mount package, providing easy mounting on printed circuit boards with limited space. It offers a maximum power dissipation rating of 1.6 watts and operates reliably over a broad temperature range from -65°C to 150°C, ensuring stable performance in harsh environments.

This transistor features a single transistor configuration with PNP polarity, a collector-base voltage VCBO of 600 V, and an emitter-base voltage VEBO of -7 V. It typically achieves a minimum DC current gain (hFE) of 120, which contributes to efficient switching and amplification.

The STN9360 transistor complies with RoHS directives, promoting environmentally responsible manufacturing and use. Dimensionally, the device measures approximately 6.7 mm in length, 7.3 mm in width, and 1.9 mm in height, allowing for precise PCB layout design.

Applications of the STN9360 include electronic power supplies, amplifiers, motor control circuits, and automotive electronics where high voltage and medium current switching are required. Its robust electrical and thermal ratings make it a reliable choice for various industrial and commercial electronics projects.

Features 3-pin SOT-223 surface-mount package suitable for compact PCB designs. Maximum power dissipation of 1.6 watts for moderate power applications. Wide operating temperature range from -65°C to 150°C for reliable use in varying environments.

High voltage capabilities with collector base voltage up to 600 V and emitter base voltage of -7 V. Designed with a single transistor configuration and PNP polarity. Typical minimum DC current gain (hFE) of 120 ensuring stable transistor operation.

Complies with RoHS standards for environmental safety. Dimensions approximately 6.7 mm length, 7.3 mm width, and 1.9 mm height for design accuracy. Explore more semiconductor components and Bipolar Transistors on EnvMart to find compatible devices and complementary electronic parts for your designs.