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Nexperia N-Channel MOSFET 60 V, 300 mA, 830 mW Surface Mount SOT-23 3-Pin Transistor 2N7002,215

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Nexperia N-Channel MOSFET 60 V, 300 mA, 830 mW Surface Mount SOT-23 3-Pin Transistor 2N7002,215

Name: Nexperia N-Channel MOSFET 60 V, 300 mA, 830 mW Surface Mount SOT-23 3-Pin Transistor 2N7002,215
Brand: Nexperia
SKU: 394063
Price: 0.08 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	2N7002,215
Width	1.4mm
Mount Type	Surface
Series	2N7002
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	830mW
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.2V

Key Features

Operates with a maximum continuous drain current of 300 mA.
Supports a maximum drain-source voltage of 60 V for robust performance.
Features an enhancement channel mode for efficient switching.
Maximum power dissipation rated at 830 mW for reliable operation.
Compact 3-pin SOT-23 surface mount package measuring 3 mm length, 1.4 mm width, and 1 mm height.
Designed for a wide operating temperature range from -65°C up to 150°C.
Maximum gate-source voltage rating of -30 V to +30 V enhances durability.
Forward voltage is 1.2 V ensuring low loss in conduction.

Product Description

The Nexperia 2N7002,215 N-Channel MOSFET is a compact, high-performance transistor designed for a variety of electronics applications requiring switching and amplification. This enhancement-mode MOSFET supports a maximum continuous drain current of 300 mA and a drain-source voltage rating of 60 V, making it suitable for low-to-medium power switching circuits.

This transistor is housed in a space-saving 3-pin SOT-23 surface mount package with dimensions of 3 mm in length, 1.4 mm in width, and 1 mm in height, optimally designed for modern PCB layouts. The device operates reliably over a broad temperature range from -65°C to 150°C, enabling use in demanding industrial, automotive, and consumer electronics environments.

Its maximum power dissipation of 830 mW allows efficient handling of heat during operation, and the forward voltage of 1.2 V contributes to efficient conduction with minimal losses. The maximum gate-source voltage of -30 V to +30 V provides good tolerance against transients and overvoltage conditions.

The 2N7002,215 supports an enhancement channel mode, facilitating precise control in switching circuits, power management, and signal amplification. It is surface-mounted for automated assembly, improving manufacturing efficiency and reliability.

Operates with a maximum continuous drain current of 300 mA. Supports a maximum drain-source voltage of 60 V for robust performance. Features an enhancement channel mode for efficient switching. Maximum power dissipation rated at 830 mW for reliable operation.

Compact 3-pin SOT-23 surface mount package measuring 3 mm length, 1.4 mm width, and 1 mm height. Designed for a wide operating temperature range from -65°C up to 150°C. Maximum gate-source voltage rating of -30 V to +30 V enhances durability.

Forward voltage is 1.2 V ensuring low loss in conduction. Manufactured in China following standard semiconductor quality levels.

This transistor is ideal for industrial controls, automotive electronics, power management systems, and general semiconductor discrete component applications in electronics manufacturing.

Explore more MOSFET and semiconductor components for your circuit design and industrial applications on EnvMart.