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DiodesZetex Switching Diode Single Silicon Junction 1 A 1000 V DO-41 Through Hole 2-Pin PR1007G-T

Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin China
Diameter 2.72mm
Brand DiodesZetex
Height 2.7mm
Length 5.21mm
Model PR1007G-T
Width 2.7mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type DO-41
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 500ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 1000V

Key Features

  • This diode features a maximum forward current of 1 ampere.
  • It has a peak repetitive reverse voltage rating of 1000 volts.
  • The package type is DO-41 suitable for through-hole mounting.
  • The peak reverse recovery time is 500 nanoseconds, ensuring fast switching.
  • It operates reliably between -65°C to 150°C operating temperatures.
  • The maximum forward voltage drop is 1.3 volts, minimizing power loss.
  • It withstands a peak forward surge current of up to 30 amperes.
  • Compact dimensions include length 5.21 mm, diameter 2.72 mm, width and height 2.7 mm.

Product Description

DiodesZetex PR1007G-T is a high-performance switching diode designed for efficient electronic applications requiring fast switching and reliable current handling. This single silicon junction diode supports a forward current of 1 ampere and can tolerate peak reverse voltages up to 1000 volts, making it suitable for power management in semiconductor circuits.

The diode is packaged in a DO-41 through-hole mount style with two pins, allowing easy integration into printed circuit boards. Its fast peak reverse recovery time of 500 nanoseconds enables quick switching and minimal switching losses, critical for high-frequency operation in industrial, commercial, and electronic power supply systems.

Operating temperature ranges from a low of -65°C to a high of 150°C guarantee stable performance in varied environmental conditions. The forward voltage drop maximum of 1.3 volts ensures energy-efficient conduction, while the surge current capacity of 30 amperes offers robustness against transient power spikes.

Measuring 5.21 mm in length with 2.7 mm width and height and a diameter of 2.72 mm, it is compact and ideal for space-constrained design layouts. This diode is manufactured in China and does not hold specific automotive standards or certifications, targeting general electronic and power switching use cases including industrial controls, telecommunications, and power supply protection circuits.

This diode features a maximum forward current of 1 ampere. It has a peak repetitive reverse voltage rating of 1000 volts. The package type is DO-41 suitable for through-hole mounting. The peak reverse recovery time is 500 nanoseconds, ensuring fast switching.

It operates reliably between -65°C to 150°C operating temperatures. The maximum forward voltage drop is 1.3 volts, minimizing power loss. It withstands a peak forward surge current of up to 30 amperes. Compact dimensions include length 5.21 mm, diameter 2.72 mm, width and height 2.7 mm.

Manufactured to standard quality without automotive certifications and made in China.

This product is well suited for semiconductor switching applications in industrial manufacturing, electronic component assembly, power electronics, and advanced PCB design projects. Explore the full range of discrete semiconductors and Switching Diodes at EnvMart for optimized circuit solutions.

DiodesZetex Switching Diode Single Silicon Junction 1 A 1000 V DO-41 Through Hole 2-Pin PR1007G-T
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Frequently Asked Questions

The maximum forward current of this diode is 1 ampere.

It has a peak repetitive reverse voltage rating of 1000 volts.

The diode measures 5.21 mm in length, 2.7 mm in width and height, and has a diameter of 2.72 mm.

The peak reverse recovery time is 500 nanoseconds, which supports fast switching.

It operates reliably between -65°C and 150°C.

The maximum forward voltage drop is 1.3 volts, which helps minimize power loss.

This diode is designed for through-hole mounting in a DO-41 package.

It can withstand a peak forward surge current of up to 30 amperes.

The diode configuration is single, which means it consists of one silicon junction.

This diode is manufactured in China.

It is suitable for semiconductor switching applications in industrial manufacturing, electronic component assembly, and power electronics.

The diode has a pin count of 2, making it easy to integrate into circuits.

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