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| Country of Origin | China |
|---|---|
| Diameter | 2.72mm |
| Brand | DiodesZetex |
| Height | 2.7mm |
| Length | 5.21mm |
| Model | PR1007G-T |
| Width | 2.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-41 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 500ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1000V |
DiodesZetex PR1007G-T is a high-performance switching diode designed for efficient electronic applications requiring fast switching and reliable current handling. This single silicon junction diode supports a forward current of 1 ampere and can tolerate peak reverse voltages up to 1000 volts, making it suitable for power management in semiconductor circuits.
The diode is packaged in a DO-41 through-hole mount style with two pins, allowing easy integration into printed circuit boards. Its fast peak reverse recovery time of 500 nanoseconds enables quick switching and minimal switching losses, critical for high-frequency operation in industrial, commercial, and electronic power supply systems.
Operating temperature ranges from a low of -65°C to a high of 150°C guarantee stable performance in varied environmental conditions. The forward voltage drop maximum of 1.3 volts ensures energy-efficient conduction, while the surge current capacity of 30 amperes offers robustness against transient power spikes.
Measuring 5.21 mm in length with 2.7 mm width and height and a diameter of 2.72 mm, it is compact and ideal for space-constrained design layouts. This diode is manufactured in China and does not hold specific automotive standards or certifications, targeting general electronic and power switching use cases including industrial controls, telecommunications, and power supply protection circuits.
This diode features a maximum forward current of 1 ampere. It has a peak repetitive reverse voltage rating of 1000 volts. The package type is DO-41 suitable for through-hole mounting. The peak reverse recovery time is 500 nanoseconds, ensuring fast switching.
It operates reliably between -65°C to 150°C operating temperatures. The maximum forward voltage drop is 1.3 volts, minimizing power loss. It withstands a peak forward surge current of up to 30 amperes. Compact dimensions include length 5.21 mm, diameter 2.72 mm, width and height 2.7 mm.
Manufactured to standard quality without automotive certifications and made in China.
This product is well suited for semiconductor switching applications in industrial manufacturing, electronic component assembly, power electronics, and advanced PCB design projects. Explore the full range of discrete semiconductors and Switching Diodes at EnvMart for optimized circuit solutions.
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