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onsemi NPN Transistor 1.5 A 80 V 3-Pin TO-126 Package BD13916STU

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onsemi NPN Transistor 1.5 A 80 V 3-Pin TO-126 Package BD13916STU

Name: onsemi NPN Transistor 1.5 A 80 V 3-Pin TO-126 Package BD13916STU
Brand: onsemi
SKU: 390491
Price: 0.38 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	27.5mm
Length	8.3mm
Model	BD13916STU
Width	3.5mm
Mount Type	Through Hole
Series	BD139
Maximum Operating Temperature	150°C
Package Type	TO-126
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V
Minimum DC Current Gain hFE	25
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	12.5W
Maximum DC Collector Current Idc	1.5A
Transistor Configuration	Single
onsemi BD13916STU NPN Transistor, 1.5 A, 80 V, 3-Pin TO-126Brand	onsemi

Key Features

This transistor supports a maximum collector current of 1.5 A.
The maximum collector-emitter voltage is 80 V, suitable for medium power applications.
It features a Through Hole mount type in a TO-126 package.
The device has a minimum current gain (hFE) of 25.
Maximum power dissipation of this transistor is 12.5 W.
It operates safely up to a maximum temperature of 150°C.
This transistor has a pin count of 3, providing a simple configuration.
Designed with NPN transistor polarity for diverse electronic circuits.

Product Description

onsemi BD13916STU NPN Transistor is a high-performance bipolar transistor designed for electronic components and power applications. It supports a maximum DC collector current of 1.5 A and a collector-emitter voltage of 80 V, making it suitable for a broad range of circuits requiring medium power handling.

This transistor comes in a TO-126 package and uses a Through Hole mounting style, ensuring robust and reliable installation in power and signal amplification circuits. It exhibits a minimum current gain (hFE) of 25, which provides efficient amplification performance.

With a maximum power dissipation of 12.5 W and a maximum operating temperature rating of 150°C, it delivers dependable operation in demanding industrial, automotive, and electronic manufacturing environments. The NPN polarity configuration offers versatility for switching and amplification tasks in industrial, laboratory, HVAC, and commercial applications.

The compact package has a height of 27.5 mm, length of 8.3 mm, and width of 3.5 mm, fitting easily into printed circuit boards. This device supports a maximum collector current of 1.5 A. Maximum collector-emitter voltage rating is 80 V.

Package type is TO-126 with Through Hole mounting. Minimum DC current gain (hFE) of 25 ensures reliable signal amplification. Power dissipation capacity of 12.5 W for sustained usage. Maximum operating temperature up to 150°C supports harsh environments.

Pin count of 3 facilitates straightforward circuit integration. Emitter-base voltage limited to 5 V to protect transistor integrity. Physical dimensions accommodate standard PCB mounting.

This transistor is ideal for industrial manufacturing, electronic assembly, automotive circuitry, and power management applications. Its reliable specifications make it a preferred choice for engineers dealing with medium power switching and amplification tasks.

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