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DiodesZetex N-Channel MOSFET 2.5 A 60 V Enhancement Mode 3-Pin SOT-23 DMN6075S-7

Category Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 3mm
Model DMN6075S-7
Width 1.4mm
Mount Type Surface
Series DMN
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 2.5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.15W
Typical Gate Charge Qg @ Vgs 12.3nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Designed for surface mount applications with a 3-pin SOT-23 package.
  • Maximum continuous drain current of 2.5 amperes for efficient switching.
  • Operates with a maximum drain-source voltage of 60 volts.
  • Features an enhancement mode channel for reliable performance.
  • Maximum drain-source resistance of 120 milliohms ensuring low conduction losses.
  • Forward voltage drop is typically 1.2 volts for better efficiency.
  • Maximum gate-source voltage rating of ±20 volts for robust gate control.
  • Power dissipation rating is 1.15 watts at rated conditions.

Product Description

The DiodesZetex DMN6075S-7 is an N-Channel MOSFET designed for efficient low voltage switching applications in electronic circuits. With a maximum continuous drain current of 2.5 A and a drain-source voltage of 60 V, this device operates in enhancement mode offering optimized switching performance.

Housed in a compact SOT-23 surface mount package with a 3-pin configuration, the DMN6075S-7 offers a low drain-source resistance of 120 milliohms, resulting in minimal conduction losses and improved overall efficiency. The device has a forward voltage drop of 1.2 V and can tolerate gate-source voltages up to ±20 V ensuring robust operation in demanding circuits.

Power dissipation is rated at 1.15 W, supporting reliable performance across a wide operating temperature range from -55°C up to 150°C. The typical gate charge of 12.3 nC allows rapid switching transitions suited for high-frequency applications.

With compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height, this MOSFET is ideal for space-constrained designs. It also meets the stringent AEC-Q101 automotive qualification standards, rendering it suitable for automotive and industrial applications requiring high reliability.

This device is well suited for industrial, automotive, consumer electronics, and power management circuits, fulfilling roles such as load switching, relay driving, and signal amplification.

Surface mount 3-pin SOT-23 package ensures easy PCB integration. Efficient low voltage N-channel enhancement mode MOSFET. High reliability meeting automotive AEC-Q101 standards. Wide operating temperature range from -55°C to 150°C.

Minimal power losses due to low Rds(on) of 120 mΩ. Supports rapid switching with typical gate charge of 12.3 nC. Compact size suitable for dense electronic assemblies. Robust gate voltage tolerance of ±20 V ensures safe operation.

Explore more Semiconductor components and MOSFET solutions on EnvMart for reliable electronic design and manufacturing.

DiodesZetex N-Channel MOSFET 2.5 A 60 V Enhancement Mode 3-Pin SOT-23 DMN6075S-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.5 amperes.

It operates with a maximum drain-source voltage of 60 volts.

The DMN6075S-7 is housed in a compact SOT-23 surface mount package.

The maximum power dissipation rating is 1.15 watts at rated conditions.

The typical gate charge is 12.3 nC, allowing for rapid switching transitions.

The forward voltage drop is typically 1.2 volts, which enhances efficiency.

This model has dimensions of 3 mm in length, 1.4 mm in width, and 1 mm in height.

The maximum gate-source voltage rating is ±20 volts.

It operates within a temperature range of -55°C to 150°C.

The DMN6075S-7 meets the AEC-Q101 automotive qualification standards.

The maximum drain-source resistance is 120 milliohms, ensuring low conduction losses.

This model is suitable for industrial, automotive, consumer electronics, and power management circuits, fulfilling roles like load switching and signal amplification.

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