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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3mm |
| Model | DMN6075S-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMN |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.5A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.15W |
| Typical Gate Charge Qg @ Vgs | 12.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
The DiodesZetex DMN6075S-7 is an N-Channel MOSFET designed for efficient low voltage switching applications in electronic circuits. With a maximum continuous drain current of 2.5 A and a drain-source voltage of 60 V, this device operates in enhancement mode offering optimized switching performance.
Housed in a compact SOT-23 surface mount package with a 3-pin configuration, the DMN6075S-7 offers a low drain-source resistance of 120 milliohms, resulting in minimal conduction losses and improved overall efficiency. The device has a forward voltage drop of 1.2 V and can tolerate gate-source voltages up to ±20 V ensuring robust operation in demanding circuits.
Power dissipation is rated at 1.15 W, supporting reliable performance across a wide operating temperature range from -55°C up to 150°C. The typical gate charge of 12.3 nC allows rapid switching transitions suited for high-frequency applications.
With compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height, this MOSFET is ideal for space-constrained designs. It also meets the stringent AEC-Q101 automotive qualification standards, rendering it suitable for automotive and industrial applications requiring high reliability.
This device is well suited for industrial, automotive, consumer electronics, and power management circuits, fulfilling roles such as load switching, relay driving, and signal amplification.
Surface mount 3-pin SOT-23 package ensures easy PCB integration. Efficient low voltage N-channel enhancement mode MOSFET. High reliability meeting automotive AEC-Q101 standards. Wide operating temperature range from -55°C to 150°C.
Minimal power losses due to low Rds(on) of 120 mΩ. Supports rapid switching with typical gate charge of 12.3 nC. Compact size suitable for dense electronic assemblies. Robust gate voltage tolerance of ±20 V ensures safe operation.
Explore more Semiconductor components and MOSFET solutions on EnvMart for reliable electronic design and manufacturing.
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