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Microchip N-Channel Enhancement Mode MOSFET, 230 mA, 60 V, 3-Pin TO-92 VN2222LL-G

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Microchip N-Channel Enhancement Mode MOSFET, 230 mA, 60 V, 3-Pin TO-92 VN2222LL-G

Name: Microchip N-Channel Enhancement Mode MOSFET, 230 mA, 60 V, 3-Pin TO-92 VN2222LL-G
Brand: Microchip
SKU: 384453
Price: 0.53 USD
Availability: InStock

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Category MOSFET Brand Microchip Condition New

Specifications

Country of Origin	India
Brand	Microchip
Height	5.33mm
Length	5.08mm
Model	VN2222LL-G
Width	4.06mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	230mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	7.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1W
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	8.85V

Key Features

The device features an enhancement mode operation with low threshold voltage and high input impedance.
Maximum drain-source resistance is 7.5 ohms ensuring efficient conduction.
It supports a maximum power dissipation of 1 watt for reliable performance.
Operating temperature range extends from -55°C to 150°C.
Maximum gate-source voltage is ±30 volts for robust gate control.
With a compact TO-92 through-hole package, it is easy to integrate on PCB layouts.
Forward voltage is rated at 8.85 volts, suitable for various power applications.

Product Description

Microchip VN2222LL-G is an N-Channel enhancement mode MOSFET transistor in a three-pin TO-92 package, engineered for versatile switching and amplification use cases. It offers a maximum continuous drain current of 230 mA and is capable of handling a maximum drain-source voltage of 60 volts, making it suitable for low power, high reliability electronic circuits.

The transistor's enhancement type channel ensures normally-off operation with a low threshold voltage, combined with high input impedance and fast switching characteristics. This enables efficient performance in power management, signal amplification, and switching regulator applications in industrial, laboratory, and consumer electronics environments.

Designed for through-hole mounting, the TO-92 package dimensions of approximately 5.33 mm height, 5.08 mm length, and 4.06 mm width provide compactness for PCB integration. It is rated for a maximum power dissipation of 1 watt, supporting moderate power applications, while operating safely in ambient temperatures ranging from -55°C up to 150°C.

Key operational parameters include a maximum gate-source voltage of -30 V to +30 V and a forward voltage of 8.85 V, ensuring robust gate threshold control and switching efficiency. The maximum drain-source resistance of 7.5 ohms offers low conduction losses, enhancing circuit performance and thermal management.

The device is ideal for use in electronic switching, small load driving, amplifiers, and digital logic applications. Suitable for adoption in automotive electronics, industrial controls, and general-purpose electronic designs.

Being a Microchip product, it adheres to quality standards expected in semiconductor manufacturing. The through-hole TO-92 packaging facilitates manual assembly or automatic insertion processes in production environments.

This MOSFET is a reliable choice for engineers requiring a low-voltage, low-current transistor with stable thermal performance. Explore the comprehensive range of Microchip MOSFETs and semiconductor devices available at EnvMart for professional electronic design, prototyping, and manufacturing needs.