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onsemi Complex NPN Bipolar Transistor 500 mA 45 V Surface Mount 6-Pin SC-74 NSM4002MR6T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 3.1mm
Model NSM4002MR6T1G
Width 3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SC-74
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 45V
Maximum Power Dissipation Pd 260mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Complex
Maximum Transition Frequency ft 300MHz

Key Features

  • Supports maximum DC collector current of 500 mA.
  • Rated for collector emitter voltage up to 45 V.
  • Features a compact 6-pin SC-74 surface mount package.
  • Offers a minimum DC current gain (hFE) of 40 for reliable amplification.
  • Maximum power dissipation is 260 mW for efficient thermal management.
  • Operating temperature up to 150°C ensuring stable performance.
  • High transition frequency of 300 MHz suitable for high-speed switching.
  • Pin count of 6 optimized for complex transistor configurations.

Product Description

onsemi NSM4002MR6T1G is a complex NPN bipolar transistor designed for surface mount applications requiring moderate current and voltage ratings. It supports a maximum DC collector current of 500 mA and a collector emitter voltage of 45 V. Packaged in a 6-pin SC-74 format, it is optimized for spatially efficient PCB designs.

This transistor delivers a minimum DC current gain of 40, ensuring reliable amplification in electronic circuits. Its maximum power dissipation of 260 mW, combined with an operating temperature range up to 150°C, enables stable performance in demanding environments.

Equipped with a high transition frequency of 300 MHz, the NSM4002MR6T1G transistor suits high-speed switching and amplification tasks. Its compact dimensions of 3.1 mm length, 3 mm width, and 1.1 mm height facilitate integration into dense electronic assemblies.

The 6-pin design supports complex transistor configurations typical in discrete semiconductor usages, widely applicable in electronic components for consumer, industrial, and power management systems.

As a new product from onsemi, this transistor meets industry standards for quality and performance. Ideal for applications in semiconductor discrete devices requiring precise current and voltage control.

Supports maximum DC collector current of 500 mA. Rated for collector emitter voltage up to 45 V. Features a compact 6-pin SC-74 surface mount package. Offers a minimum DC current gain (hFE) of 40 for reliable amplification.

Maximum power dissipation is 260 mW for efficient thermal management. Operating temperature up to 150°C ensuring stable performance. High transition frequency of 300 MHz suitable for high-speed switching. Pin count of 6 optimized for complex transistor configurations.

Dimensions: length 3.1 mm, width 3 mm, height 1.1 mm for space-saving PCB layouts. Suitable for complex bipolar transistor configurations. Explore similar transistor products for a wide range of industrial, electronic, and power management applications at EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Complex NPN Bipolar Transistor 500 mA 45 V Surface Mount 6-Pin SC-74 NSM4002MR6T1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

This transistor is rated for a collector-emitter voltage of up to 45 V.

It offers a minimum DC current gain (hFE) of 40, ensuring reliable amplification.

The maximum power dissipation for this transistor is 260 mW.

The operating temperature can reach up to 150°C, allowing stable performance in demanding environments.

It has a high transition frequency of 300 MHz, making it suitable for high-speed switching applications.

The dimensions are 3.1 mm in length, 3 mm in width, and 1.1 mm in height.

This model comes in a compact 6-pin SC-74 surface mount package.

It features a pin count of 6, optimized for complex transistor configurations.

This is a complex NPN bipolar transistor designed for surface mount applications.

The maximum emitter-base voltage (VEBO) is 6 V.

It is widely applicable in electronic components for consumer, industrial, and power management systems.

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