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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 3.1mm |
| Model | NSM4002MR6T1G |
| Width | 3mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-74 |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | 45V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 45V |
| Maximum Power Dissipation Pd | 260mW |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Complex |
| Maximum Transition Frequency ft | 300MHz |
onsemi NSM4002MR6T1G is a complex NPN bipolar transistor designed for surface mount applications requiring moderate current and voltage ratings. It supports a maximum DC collector current of 500 mA and a collector emitter voltage of 45 V. Packaged in a 6-pin SC-74 format, it is optimized for spatially efficient PCB designs.
This transistor delivers a minimum DC current gain of 40, ensuring reliable amplification in electronic circuits. Its maximum power dissipation of 260 mW, combined with an operating temperature range up to 150°C, enables stable performance in demanding environments.
Equipped with a high transition frequency of 300 MHz, the NSM4002MR6T1G transistor suits high-speed switching and amplification tasks. Its compact dimensions of 3.1 mm length, 3 mm width, and 1.1 mm height facilitate integration into dense electronic assemblies.
The 6-pin design supports complex transistor configurations typical in discrete semiconductor usages, widely applicable in electronic components for consumer, industrial, and power management systems.
As a new product from onsemi, this transistor meets industry standards for quality and performance. Ideal for applications in semiconductor discrete devices requiring precise current and voltage control.
Supports maximum DC collector current of 500 mA. Rated for collector emitter voltage up to 45 V. Features a compact 6-pin SC-74 surface mount package. Offers a minimum DC current gain (hFE) of 40 for reliable amplification.
Maximum power dissipation is 260 mW for efficient thermal management. Operating temperature up to 150°C ensuring stable performance. High transition frequency of 300 MHz suitable for high-speed switching. Pin count of 6 optimized for complex transistor configurations.
Dimensions: length 3.1 mm, width 3 mm, height 1.1 mm for space-saving PCB layouts. Suitable for complex bipolar transistor configurations. Explore similar transistor products for a wide range of industrial, electronic, and power management applications at EnvMart.
Explore more products in our Bipolar Transistors category.
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