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Nexperia P-Channel MOSFET 1.2 A 20 V Enhancement Mode 3-Pin SOT-23 PMV160UP,215

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Nexperia P-Channel MOSFET 1.2 A 20 V Enhancement Mode 3-Pin SOT-23 PMV160UP,215

Name: Nexperia P-Channel MOSFET 1.2 A 20 V Enhancement Mode 3-Pin SOT-23 PMV160UP,215
Brand: Nexperia
SKU: 376644
Price: 0.16 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV160UP,215
Width	1.4mm
Mount Type	Surface
Series	PMV160UP
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1.2A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	210mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.17W
Typical Gate Charge Qg @ Vgs	3.3nC
Maximum Gate Source Voltage Vgs	8V

Key Features

This device operates in enhancement mode suitable for power management circuits.
The maximum drain-source resistance is 210 milliohms ensuring efficient conduction.
Maximum power dissipation is rated at 2.17 W for reliable operation.
It supports a typical gate charge of 3.3 nC at gate-source voltage of 3.3 V allowing fast switching.
The MOSFET functions within an ambient temperature range from -55°C to 150°C.
Compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height enable space-saving PCB designs.
Suitable for use in electronic components, power connectors, and semiconductor circuits.
Manufactured under non-automotive standards with country of origin China.

Product Description

Nexperia PMV160UP,215 is a P-Channel MOSFET designed for use in electronic and power management applications. It features a surface mount 3-pin SOT-23 package allowing compact PCB applications. The device supports a maximum continuous drain current of 1.2 A with a maximum drain-source voltage of 20 V, operating in enhancement mode for reliable switching functionality.

This transistor has a maximum drain-source resistance of 210 milliohms, which ensures minimal conduction losses and is suitable for efficient power switching. It can dissipate power up to 2.17 W, making it appropriate for moderate power applications.

The gate charge is typically 3.3 nC at a gate voltage of 3.3 V, facilitating fast switching speeds important in digital and analog circuit designs. Operating temperature range is broad, from -55°C to 150°C, supporting various environmental conditions typically found in industrial, commercial, and consumer electronics.

The small form factor with length 3 mm, width 1.4 mm, and height 1 mm helps in designing compact, high-density electronics. It is widely used across semiconductor circuits, discrete semiconductor applications, and power connectors requiring P-Channel MOSFET solutions.

This P-Channel MOSFET is ideal for power switching and amplification applications. Compact 3-pin SOT-23 surface mount design allows easy PCB integration. Supports maximum continuous drain current of 1.2 A and 20 V drain-source voltage.

Enhancement mode channel for efficient switching. Low Rds(on) of 210 mΩ reduces power losses. Operating temperature range from -55°C to 150°C ensures durability. Typical gate charge of 3.3 nC enables fast response times.

Manufactured in China adhering to quality standards.

This product is suitable for use in industrial electronics, power management circuits, electronic components manufacturing, and semiconductor applications. It supports design engineers requiring efficient and compact P-Channel MOSFETs.

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