Nexperia P-Channel MOSFET 1.2 A, 20 V Enhancement Mode, 3-Pin SOT-23 Package PMV160UP,215

Nexperia PMV160UP,215 is a P-Channel MOSFET transistor featuring a compact 3-Pin SOT-23 surface mount package, designed for electronic and power management applications. This discrete semiconductor offers a maximum continuous drain current of 1.2 A and can withstand drain-source voltages up to 20 V, ensuring reliable performance in low voltage circuits.

The enhancement channel mode optimizes switching efficiency, with a maximum drain-source resistance (Rds) of 210 milliohm minimizing power losses. Its typical gate charge of 3.3 nC and a maximum gate-source voltage of 8 V allow for precise control in switching applications.

Physical dimensions measure 3 mm in length, 1.4 mm in width, and 1 mm in height, suitable for compact PCB designs. The MOSFET can operate within an extended temperature range from -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronics environments.

The 3-pin SOT-23 package supports efficient surface mounting for automated assembly processes. Operates at a maximum continuous drain current of 1.2 A for reliable circuit switching. Handles a maximum drain-source voltage of 20 V suitable for low voltage power circuits.

Enhancement mode channel provides efficient gate control. Low drain-source resistance reduces power dissipation and heat generation. Compact 3-Pin SOT-23 package allows space-saving PCB layout. Wide operating temperature range from -55°C to 150°C for diverse environments.

Typical gate charge of 3.3 nC supports fast switching speed. Maximum power dissipation capability of 2.17 W ensures thermal reliability. Ideal for industrial, automotive, and consumer electronic applications. Manufactured in China with new product condition assurance.

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