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Nexperia N-Channel MOSFET 400 mA 30 V Enhancement 3-Pin SOT-23 NX3008NBK,215

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1mm
Length 3mm
Model NX3008NBK,215
Width 1.4mm
Mount Type Surface
Series NX3008NBK
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 400mA
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 2.8Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.14W
Typical Gate Charge Qg @ Vgs 0.52nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 1.2V

Key Features

  • This enhancement mode MOSFET features a maximum drain-source resistance of 2.8 ohms for efficient switching.
  • It supports a maximum power dissipation of 1.14 W and operates reliably in temperatures ranging from -55°C to 150°C.
  • The device has a typical gate charge of 0.52 nC at gate-source voltage and a maximum gate source voltage of -8 to +8 V.
  • Designed for surface mounting, the compact dimensions include a length of 3 mm, width of 1.4 mm, and height of 1 mm.
  • Includes automotive standard AEC-Q101 certification, ensuring suitability for automotive electronics.

Product Description

Nexperia NX3008NBK,215 is a high-performance N-Channel MOSFET designed for switching and amplification applications requiring low voltage and current ratings. It features a continuous drain current rating of 400 mA and a maximum drain-source voltage of 30 V, offering robust operation in compact electronic assemblies.

The device comes in a 3-pin SOT-23 surface-mount package with dimensions of 3 mm length, 1.4 mm width, and 1 mm height. Its low maximum drain-source resistance of 2.8 ohms reduces conduction losses, improving power efficiency in switching circuits.

Operating temperature range spans from -55°C up to 150°C, making it suitable for harsh environments and automotive applications, supported by the AEC-Q101 automotive standard. The enhancement mode operation and a typical gate charge of 0.52 nC facilitate fast switching and minimal gate drive requirements.

This MOSFET is ideal for use in industrial electronic components, automotive circuits, power management, and general-purpose electronic devices requiring low voltage switching. Its surface mount design enables high-density PCB assembly and ease of integration in automated production.

This product features a maximum continuous drain current of 400 mA. Maximum drain-source voltage rated at 30 V ensures reliable low-voltage performance. Compact 3-pin SOT-23 package allows for surface mount applications.

Typical gate charge of 0.52 nC reduces gate drive power consumption. Meets automotive-grade AEC-Q101 standard, suitable for automotive electronic systems. Choose Nexperia MOSFETs for reliable semiconductor performance in demanding environments. Explore more semiconductor and discrete component options at EnvMart.

Nexperia N-Channel MOSFET 400 mA 30 V Enhancement 3-Pin SOT-23 NX3008NBK,215
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Frequently Asked Questions

The maximum continuous drain current for this model is 400 mA.

This MOSFET has a maximum drain-source voltage rating of 30 V.

The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1 mm in height.

The maximum power dissipation for this model is 1.14 W.

The typical gate charge at gate-source voltage for this MOSFET is 0.52 nC.

It operates reliably in temperatures ranging from -55°C to 150°C.

This model meets the AEC-Q101 automotive standard, ensuring suitability for automotive electronics.

The maximum gate-source voltage for this device is -8 to +8 V.

This model is designed for surface mounting.

The maximum drain-source resistance is 2.8 ohms.

This MOSFET has a pin count of 3.

This model features an N-channel type.

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