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Vishay Switching Diode Single Silicon Junction 16A 2-Pin TO-220F 600V FESF16JT-E3/45

Category Switching Diode Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 15.24mm
Length 10.26mm
Model FESF16JT-E3/45
Width 4.83mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220F
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 250A
Maximum Forward Voltage Vf 1.5V
Peak Reverse Recovery Time trr 50ns
Maximum Forward Current If 16A
Maximum Peak Reverse Repetitive Voltage Vrrm 600V

Key Features

  • Maximum forward current of 16 amperes for reliable switching performance.
  • Peak reverse voltage rating of 600 volts suitable for high voltage applications.
  • Package type TO-220F ensures easy through-hole mounting and heat dissipation.
  • Ultrafast recovery time of 50 nanoseconds for efficient switching in power electronics.
  • Maximum forward voltage drop of 1.5 volts minimizing power loss.
  • Operates over a temperature range from -65°C to 150°C for harsh conditions.
  • Peak non-repetitive forward surge current capability of 250 amperes for transient tolerance.
  • Manufactured in China with new product condition guaranteed.

Product Description

Vishay FESF16JT-E3/45 switching diode is designed for high performance power electronic switching applications. Featuring a silicon junction construction, this diode supports a maximum forward current of 16 amperes and can withstand peak repetitive voltages up to 600 volts, making it suitable for industrial, electrical, and power management circuits.

The diode comes in a reliable TO-220F 2-pin through-hole package that facilitates heat dissipation and easy PCB mounting. Its ultrafast recovery time of 50 nanoseconds reduces switching losses and improves efficiency in converter, inverter, and rectification circuits.

This device operates reliably over a wide temperature range (-65°C to 150°C), ensuring durability in demanding environments. It also supports a peak forward surge current of 250 amperes to handle transient energy spikes without failure.

Physical dimensions of the diode are compact, with a length of 10.26 mm, width of 4.83 mm, and height of 15.24 mm, making it ideal for space-constrained designs. This component is sourced from China and is provided as new, meeting quality standards suitable for professional electronic manufacturing and repair.

Maximum forward current for dependable switching performance. Peak repetitive voltage rating enables high voltage circuit applications. Through-hole mounting package supports thermal management. Ultrafast recovery time enhances operational efficiency.

Wide temperature operating range suits varied industrial applications. Handles surge currents to improve robustness. Compact form factor supports integration in dense circuit boards. New product with manufacturing quality assurance from China.

Explore our comprehensive selection of discrete semiconductors including Switching Diodes at EnvMart for professional electronic design and manufacturing.

Vishay Switching Diode Single Silicon Junction 16A 2-Pin TO-220F 600V FESF16JT-E3/45
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Frequently Asked Questions

The maximum forward current of the Vishay FESF16JT-E3/45 diode is 16 amperes, ensuring reliable switching performance.

This diode has a peak reverse voltage rating of 600 volts, making it suitable for high voltage applications.

The diode is packaged in a TO-220F 2-pin through-hole package, which facilitates easy mounting and heat dissipation.

It features an ultrafast recovery time of 50 nanoseconds, which helps reduce switching losses in power electronics.

This model operates over a temperature range from -65°C to 150°C, making it suitable for harsh conditions.

The diode can handle a peak non-repetitive forward surge current of 250 amperes, providing tolerance for transient energy spikes.

The dimensions of this diode are 10.26 mm in length, 4.83 mm in width, and 15.24 mm in height.

This diode is configured as a single silicon junction, suitable for various electronic applications.

It has a maximum forward voltage drop of 1.5 volts, which helps minimize power loss during operation.

Yes, it is designed for high performance in power electronic switching applications, including power management circuits.

The Vishay FESF16JT-E3/45 diode is manufactured in China and is guaranteed to be in new product condition.

This model features a through-hole mounting type, which is advantageous for thermal management and PCB integration.

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