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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.1mm |
| Length | 3.04mm |
| Model | NSS60200LT1G |
| Width | 2.64mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -7V |
| Maximum Collector Base Voltage VCBO | -80V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 540mW |
| Maximum DC Collector Current Idc | -2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
onsemi NSS60200LT1G is a high-quality PNP bipolar transistor designed for a wide range of electronic applications including industrial, automotive, and consumer electronics. It supports a maximum DC collector current of -2 A and can withstand collector emitter voltages up to -60 V. The transistor is configured as a single unit and housed in a compact 3-pin SOT-23 surface mount package, ideal for space-constrained PCB layouts.
Its robust electrical characteristics include a maximum collector base voltage of -80 V and emitter base voltage of -7 V. Minimum DC gain (hFE) of 100 ensures efficient current amplification. With power dissipation rated at 540 mW and a maximum operating temperature of 150°C, the device offers reliable performance under demanding thermal conditions.
The transistor’s frequency response is suited to applications requiring operation up to 100 MHz, enabling use in switching and amplification circuits. The packaging and mounting style is surface mount technology (SMT), allowing for automated PCB assembly.
This device complies with the AEC-Q101 automotive standard, making it suitable for stringent automotive and other industrial electronic designs requiring high reliability and durability.
Physical dimensions are small with a length of 3.04 mm, width of 2.64 mm, and height of 1.1 mm, facilitating integration into compact electronic systems. Designed for surface mounting on PCBs using the 3-pin SOT-23 package.
Supports maximum DC collector current of -2 A with collector emitter voltage of -60 V. Power dissipation rated at 540 mW for reliable thermal management. High transition frequency of 100 MHz suitable for high-speed electronic circuits.
Minimum DC current gain (hFE) of 100 ensures effective current amplification. Wide operating temperature range from -55°C to 150°C supports harsh environments. Certified automotive standard AEC-Q101 for enhanced reliability.
Compact dimensions reduce PCB space usage.
This onsemi NSS60200LT1G transistor is ideal for use in industrial control systems, automotive electronic modules, consumer electronics, and other applications requiring stable PNP transistor performance. It is a versatile and dependable component for enhancing circuit designs. For more Bipolar Transistors and semiconductor components, explore the Electronics & Electricals category on EnvMart.
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