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onsemi Small Signal NPN Transistor 500 mA 80 V 3-Pin TO-92 MPSA06RA

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onsemi Small Signal NPN Transistor 500 mA 80 V 3-Pin TO-92 MPSA06RA

Name: onsemi Small Signal NPN Transistor 500 mA 80 V 3-Pin TO-92 MPSA06RA
Brand: onsemi
SKU: 374478
Price: 0.19 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	20.95mm
Length	5.2mm
Model	MPSA06RA
Width	4.19mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	TO-92
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	80V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	4V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	625mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi MPS8099G NPN Transistor, 500 mA, 80 V, 3-Pin TO-92Brand	onsemi

Key Features

Supports maximum DC collector current of 500 mA.
Maximum collector-emitter voltage rating is 80 V.
Operating temperature ranges from -55°C to 150°C.
TO-92 package with 3 pins for through-hole mounting.
Minimum current gain (hFE) is 100.
Maximum power dissipation rating is 625 mW.
Maximum transition frequency up to 100 MHz.
NPN transistor configuration suitable for small signal amplification.

Product Description

onsemi MPSA06RA is a small signal NPN bipolar junction transistor designed for various electronic applications requiring reliable switching and amplification. It features a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 80 V, making it suitable for moderate power circuits. Packaged in a compact 3-pin TO-92 through-hole format, this transistor allows for easy integration into PCB designs.

The device operates efficiently within a broad temperature range from -55°C to 150°C, ensuring durability in demanding industrial environments. Its minimum current gain (hFE) of 100 and transition frequency up to 100 MHz enable effective high-frequency signal amplification. The maximum power dissipation of 625 mW supports sustained operation with adequate thermal management.

Physical dimensions of the transistor are height 20.95 mm, length 5.2 mm, and width 4.19 mm, providing a compact footprint. As an NPN transistor with single configuration, it is widely used in electronic circuits, control systems, and signal amplification tasks.

Maximum DC collector current of 500 mA supports moderate current loads. Rated collector-emitter voltage up to 80 V ensures versatility in circuit designs. Leads in TO-92 package compatible with through-hole mounting. Minimum current gain (hFE) of 100 for consistent amplification.

Transition frequency of 100 MHz suitable for high-frequency applications. Wide operating temperature range from -55°C to 150°C for reliability. Maximum power dissipation of 625 mW for sustained performance. Compact size with physical dimensions optimized for PCB space savings.

This transistor is ideal for industrial electronics, power control units, consumer electronics, and general-purpose amplification in laboratory and manufacturing settings. EnvMart offers this onsemi MPSA06RA transistor with assured quality and compliance, supporting various applications requiring efficient bipolar junction transistors.

Explore more high-quality Bipolar Transistors and semiconductors in the EnvMart electronics category for your industrial and electronic design needs.