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onsemi Small Signal PNP Transistor 3 A, 60 V, 4-Pin SOT-223 Surface Mount NZT660
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | NZT660 |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 80 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -80V |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | -3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
Key Features
- Maximum DC collector current of 3 amperes.
- Maximum collector-emitter voltage rating of 60 volts.
- Compact 4-pin SOT-223 surface mount package.
- High minimum DC gain (hFE) of 80 ensuring amplification efficiency.
- Power dissipation capability of 2 watts.
- Operational temperature range from -55°C to 150°C.
- Maximum transition frequency of 100 MHz for high-speed operation.
- PNP transistor polarity suitable for complementary circuit designs.
Product Description
onsemi NZT660 is a small signal PNP bipolar junction transistor featuring a maximum DC collector current of 3 amperes and a maximum collector-emitter voltage of 60 volts. Housed in a compact 4-pin SOT-223 surface mount package, it supports efficient heat dissipation and minimal PCB footprint.
This transistor exhibits a minimum DC current gain (hFE) of 80, ensuring dependable amplification performance in signal processing and switching circuits. The maximum power dissipation rating of 2 watts allows for reliable operation in low-power applications.
Its operating temperature range extends from -55°C to 150°C, making it durable across various environmental conditions encountered in industrial and consumer electronics. With a maximum transition frequency (ft) of 100 MHz, the NZT660 transistor is suitable for moderate frequency amplification and switching tasks.
The PNP polarity makes it ideal for use in complementary amplifier stages and various analog circuit designs. The device does not carry automotive standard certifications, aligning it with general-purpose electronic components.
The physical dimensions include a length of 6.7 mm, a width of 3.7 mm, and a height of 1.8 mm, supporting compact PCB layouts. Maximum collector current of 3 A for versatile current handling. Surface mount package type SOT-223 for easy board assembly.
High gain and frequency performance for dependable circuit operation. Wide operating temperature range for robustness in varied environments. Compact size supporting space-efficient designs. Applications for the NZT660 transistor include general electronic circuits, signal amplification, switching operations, and use in power management and consumer electronics.
Explore more discrete Semiconductor components and bipolar transistors at EnvMart’s comprehensive electronics catalog for industrial, laboratory, and commercial requirements.
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Frequently Asked Questions
The maximum DC collector current for the NZT660 transistor is 3 amperes.
The maximum collector-emitter voltage rating is 60 volts.
The minimum DC current gain (hFE) of the NZT660 is 80.
The operational temperature range for this model extends from -55°C to 150°C.
The dimensions of the NZT660 are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
The NZT660 is housed in a compact 4-pin SOT-223 surface mount package.
The maximum power dissipation capability of the NZT660 is 2 watts.
The maximum transition frequency for this model is 100 MHz.
The transistor polarity of the NZT660 is PNP, making it suitable for complementary circuit designs.
The NZT660 is suitable for general electronic circuits, signal amplification, switching operations, and power management in consumer electronics.
The maximum emitter-base voltage (VEBO) for the NZT660 is 5 volts.
The maximum collector-base voltage (VCBO) rating for the NZT660 is 80 volts.
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