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onsemi NPN Bipolar Transistor 600 mA 40 V 3-Pin SOT-23 MMBT4401LT3G

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onsemi NPN Bipolar Transistor 600 mA 40 V 3-Pin SOT-23 MMBT4401LT3G

Name: onsemi NPN Bipolar Transistor 600 mA 40 V 3-Pin SOT-23 MMBT4401LT3G
Brand: onsemi
SKU: 233993
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBT4401LT3G
Width	2.64mm
Mount Type	Surface
Series	MMBT4401LT1
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	40V
Minimum DC Current Gain hFE	20
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	60V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	600mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This transistor supports a maximum DC collector current of 600 mA.
It can withstand a collector-emitter voltage up to 40 V.
The package type is surface mount SOT-23 with three pins.
Offers minimum DC current gain of 20, suitable for amplification purposes.
Maximum power dissipation reaches 225 mW allowing stable operation.
Operating temperature ranges from -55°C to 150°C, suitable for varied environments.
Maximum transition frequency is 100 MHz for fast switching performance.
The transistor polarity is NPN, used widely in electronic circuits.

Product Description

The onsemi MMBT4401LT3G is a general purpose NPN bipolar transistor designed for switching and amplification in electronic circuits. It supports a maximum DC collector current of 600 mA and a collector-emitter voltage rating of 40 V, packaged in a compact SOT-23 surface mount package with three pins.

The transistor features a minimum DC current gain (hFE) of 20, enabling effective signal amplification. It can dissipate power up to 225 mW and operate reliably within a wide temperature range from -55°C to 150°C, making it suitable for industrial, commercial, and consumer electronics applications.

This transistor offers a maximum transition frequency of 100 MHz, which supports fast switching applications in communications and control systems. Its NPN polarity makes it compatible with standard bipolar transistor circuits.

The compact SOT-23 package dimensions of 3.04 mm length, 2.64 mm width, and 1.11 mm height allow for space-efficient designs on printed circuit boards (PCBs). This makes the MMBT4401LT3G ideal for modern compact electronic devices requiring reliable switching components.

Maximum DC collector current of 600 mA. Collector-emitter voltage rating of 40 V. Surface mount SOT-23 package with 3 pins. Minimum DC current gain (hFE) of 20. Power dissipation capability up to 225 mW. Operating temperature range from -55°C to 150°C.

Maximum transition frequency of 100 MHz. NPN transistor polarity suitable for standard circuits. Compact dimensions facilitate space-saving PCB layouts.

This transistor is commonly used in industrial electronic assemblies, communication devices, consumer electronics, and automotive control systems where robust, high-performance switching is required. onsemi's MMBT4401LT3G provides reliable performance and consistency, making it a preferred choice for designers and manufacturers in the semiconductor market.

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