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Renesas Electronics Bipolar Transistor Dual NPN + PNP 65 mA 8 V 16-Pin SOIC HFA3096BZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Renesas Electronics |
| Height | 1.75mm |
| Length | 9.9mm |
| Model | HFA3096BZ |
| Width | 6mm |
| Mount Type | Surface |
| Series | HFA3096 |
| Maximum Operating Temperature | 125°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 16 |
| Maximum Collector Emitter Voltage Vceo | 8V |
| Transistor Polarity | NPN + PNP |
| Maximum Power Dissipation Pd | 150mW |
| Maximum DC Collector Current Idc | 65mA |
| Transistor Configuration | Dual |
Key Features
- Includes five monolithically constructed transistors with matched electrical and thermal characteristics.
- NPN transistor features an 8 GHz transition frequency for ultra high frequency applications.
- Withstands continuous collector current of 65 mA and maximum power dissipation of 150 mW.
- Surface mount design compatible with automated assembly and small footprint.
- Operates safely across a broad temperature range from -55°C to 125°C.
- Pin count of 16 pins allows flexible circuit configurations.
- Provides both NPN and PNP transistor polarity in a single array for complementary circuit design.
- Ideal for use in RF and high-frequency amplification circuits needing low noise.
Product Description
Renesas Electronics HFA3096BZ is a dual bipolar transistor array combining NPN and PNP types fabricated using Renesas' complementary bipolar ultra high frequency (UHF-1) process. This transistor array includes five transistors integrated monolithically, providing closely matched electrical and thermal performance essential for precision high-frequency circuits.
Specifically, the NPN transistor offers a transition frequency (fT) of 8 GHz and a DC current gain of 130, while the PNP transistor achieves an fT of 5.5 GHz and a current gain of 60, suitable for RF amplification applications. The device supports a maximum continuous collector current of 65 mA with a collector-emitter voltage rating of 8 V.
Designed for surface mount technology in a compact 16-pin SOIC package measuring 9.9 mm in length, 6 mm in width, and 1.75 mm in height, the HFA3096BZ supports operation in industrial and commercial temperature extremes from -55°C up to 125°C. Its monolithic construction ensures excellent thermal matching between transistors which enhances reliability in sensitive circuits.
This transistor array has a maximum power dissipation of 150 mW and is ideal for applications in wireless communication, RF modules, and other high-frequency electronic devices requiring low noise and stable transistor pairs. The combination of NPN and PNP transistors supports complementary amplifier design reducing external component counts.
Five monolithically integrated transistors with matched characteristics. High-frequency operation with NPN transistor fT of 8 GHz and PNP transistor fT of 5.5 GHz. Surface mount SOIC package with 16 pins for ease of PCB assembly.
Wide operating temperature range suitable for industrial environments. Compact dimensions of 9.9 x 6 x 1.75 mm for space-constrained designs. Low noise figure at 1.0 GHz frequency applications. Robust construction ensuring stable electrical performance.
Ideal for RF amplification and other discrete semiconductor roles. Provides significant design flexibility with access to each terminal. Explore the Renesas Electronics range for reliable bipolar transistor arrays and other semiconductor devices for electronic and industrial applications on EnvMart.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum continuous collector current for the HFA3096BZ is 65 mA.
The NPN transistor in this model has a transition frequency of 8 GHz, making it suitable for ultra high frequency applications.
This dual transistor array has a maximum power dissipation of 150 mW.
The SOIC package of the HFA3096BZ measures 9.9 mm in length, 6 mm in width, and 1.75 mm in height.
The HFA3096BZ operates safely across a temperature range from -55°C to 125°C.
This model features a pin count of 16 pins, allowing for flexible circuit configurations.
The HFA3096BZ includes both NPN and PNP transistors in a single array, facilitating complementary circuit design.
The maximum collector-emitter voltage rating for the HFA3096BZ is 8 V.
This model is ideal for RF amplification and other high-frequency electronic devices requiring low noise and stable transistor pairs.
The PNP transistor achieves a DC current gain of 60, suitable for RF amplification applications.
Yes, the HFA3096BZ is designed for surface mount technology, making it compatible with automated assembly processes.
The transistors in the HFA3096BZ are monolithically constructed, providing closely matched electrical and thermal performance.
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