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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 5mm |
| Model | NSS40302PDR2G |
| Width | 4mm |
| Mount Type | Surface |
| Series | e2PowerEdge |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | NPN + PNP |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 40V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 783mW |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 100MHz |
onsemi NSS40302PDR2G is a new dual NPN and PNP transistor designed for surface mount technology applications, housed in an 8-pin SOIC package. It is capable of handling a maximum DC collector current of 3 A with a maximum collector emitter voltage of 40 V. This device features an isolated transistor configuration that provides flexibility and convenience in designing power and signal amplification circuits.
The transistor supports a minimum DC current gain (hFE) of 180 and a maximum emitter base voltage of 6 V, ensuring efficient and reliable amplification. It has a maximum power dissipation rating of 783 mW and can operate over a wide temperature range from -55°C to 150°C, which suits demanding automotive and industrial environments.
With a maximum transition frequency of 100 MHz, NSS40302PDR2G is suitable for high-speed switching applications. The compact package dimensions of 5 mm length, 4 mm width, and 1.75 mm height optimize PCB layout and reduce space requirements. Its surface mount SOIC package type facilitates automatic insertion in manufacturing processes, increasing production efficiency.
Qualified under the automotive standard AEC-Q101, this transistor ensures robust performance and reliability for automotive electronics and other high-reliability applications. The dual transistor configuration in a single package reduces component count and saves board space.
Isolated dual NPN and PNP transistors in one SOIC package. 3 A maximum collector current for power handling. 40 V maximum collector emitter and base voltages ensure high voltage tolerance. Wide operating temperature range supports harsh environments.
High transition frequency suitable for switching circuits. Compact footprint for space optimization in PCB designs. Compliant with AEC-Q101 automotive qualification standard. Surface mount package enhances manufacturing efficiency.
This transistor is ideal for use in industrial electronics, automotive control systems, power amplification, and various laboratory and manufacturing applications where reliable dual transistor functionality is required. EnvMart customers can explore more semiconductor components and accessories to complement this high-performance transistor suitable for discrete semiconductor needs.
Explore more products in our Bipolar Transistors category.
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