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onsemi Dual NPN + PNP Transistor, 3 A, 40 V, Surface Mount SOIC 8-Pin, AEC-Q101 NSS40302PDR2G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 5mm
Model NSS40302PDR2G
Width 4mm
Mount Type Surface
Series e2PowerEdge
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 180
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 783mW
Maximum DC Collector Current Idc 3A
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • This device features isolated transistor configuration for versatile electronic circuits.
  • It withstands a maximum collector emitter voltage of 40 V and collector base voltage of 40 V.
  • The transistor offers a minimum DC current gain of 180, suitable for signal amplification.
  • Operating temperature ranges from -55°C to 150°C, ensuring reliability in harsh environments.
  • Maximum power dissipation is rated at 783 mW for robust performance.
  • The maximum emitter base voltage is 6 V, maintaining transistor integrity.
  • High-frequency operation up to 100 MHz enables use in fast switching applications.
  • The compact 5 mm x 4 mm x 1.75 mm dimensions make it suitable for space-constrained PCB designs.

Product Description

onsemi NSS40302PDR2G is a new dual NPN and PNP transistor designed for surface mount technology applications, housed in an 8-pin SOIC package. It is capable of handling a maximum DC collector current of 3 A with a maximum collector emitter voltage of 40 V. This device features an isolated transistor configuration that provides flexibility and convenience in designing power and signal amplification circuits.

The transistor supports a minimum DC current gain (hFE) of 180 and a maximum emitter base voltage of 6 V, ensuring efficient and reliable amplification. It has a maximum power dissipation rating of 783 mW and can operate over a wide temperature range from -55°C to 150°C, which suits demanding automotive and industrial environments.

With a maximum transition frequency of 100 MHz, NSS40302PDR2G is suitable for high-speed switching applications. The compact package dimensions of 5 mm length, 4 mm width, and 1.75 mm height optimize PCB layout and reduce space requirements. Its surface mount SOIC package type facilitates automatic insertion in manufacturing processes, increasing production efficiency.

Qualified under the automotive standard AEC-Q101, this transistor ensures robust performance and reliability for automotive electronics and other high-reliability applications. The dual transistor configuration in a single package reduces component count and saves board space.

Isolated dual NPN and PNP transistors in one SOIC package. 3 A maximum collector current for power handling. 40 V maximum collector emitter and base voltages ensure high voltage tolerance. Wide operating temperature range supports harsh environments.

High transition frequency suitable for switching circuits. Compact footprint for space optimization in PCB designs. Compliant with AEC-Q101 automotive qualification standard. Surface mount package enhances manufacturing efficiency.

This transistor is ideal for use in industrial electronics, automotive control systems, power amplification, and various laboratory and manufacturing applications where reliable dual transistor functionality is required. EnvMart customers can explore more semiconductor components and accessories to complement this high-performance transistor suitable for discrete semiconductor needs.

Explore more products in our Bipolar Transistors category.

onsemi Dual NPN + PNP Transistor, 3 A, 40 V, Surface Mount SOIC 8-Pin, AEC-Q101 NSS40302PDR2G
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Frequently Asked Questions

The maximum DC collector current for this model is 3 A, allowing it to handle significant power levels in various applications.

This transistor operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.

The NSS40302PDR2G is housed in an 8-pin SOIC package, which is designed for surface mount technology applications.

The maximum collector emitter voltage (Vceo) for this transistor is 40 V, ensuring it can withstand high voltage applications.

The transistor offers a minimum DC current gain (hFE) of 180, suitable for effective signal amplification.

This model has a maximum power dissipation rating of 783 mW, allowing for robust performance in various circuits.

The NSS40302PDR2G supports a maximum transition frequency of 100 MHz, making it suitable for high-speed switching applications.

The dimensions of this transistor are 5 mm in length, 4 mm in width, and 1.75 mm in height, optimizing space on PCBs.

This transistor is qualified under the AEC-Q101 automotive standard, ensuring reliability for automotive electronics.

The maximum emitter base voltage (VEBO) for this transistor is 6 V, which helps maintain its integrity during operation.

This model features an isolated transistor configuration, providing flexibility in designing power and signal amplification circuits.

The NSS40302PDR2G is suitable for applications in industrial electronics, automotive control systems, and power amplification, among others.

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