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onsemi P-Channel MOSFET 2.9 A 30 V Enhancement Type 4-Pin SOT-223 NTF5P03T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NTF5P03T3G |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | NTF |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.13W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Key Features
- The device operates in enhancement mode providing reliable switching performance.
- Maximum drain source resistance is 150 milliohms ensuring efficient conduction.
- Maximum power dissipation of 3.13 W supports moderate power applications.
- The transistor has a typical gate charge of 15 nC at Vgs enhancing fast switching capabilities.
- Operating temperature range extends from -55°C to 150°C for robust environmental tolerance.
- Maximum gate source voltage rating of -20 V to +20 V ensures gate protection during operation.
- Automotive AEC standard compliant, suitable for automotive and industrial applications.
Product Description
onsemi NTF5P03T3G is a P-Channel Power MOSFET designed for discrete semiconductor applications requiring a maximum continuous drain current of 2.9 A and maximum drain source voltage of 30 V. Packaged in a compact 4-pin SOT-223 surface mount enclosure, this enhancement mode MOSFET delivers reliable switching and moderate power dissipation of 3.13 W.
This device operates across an extended temperature range from -55°C to 150°C, making it well suited for demanding industrial and automotive environments compliant with the AEC standard. Its low maximum drain source resistance of 150 mΩ ensures efficient conduction and reduced power losses.
The typical gate charge of 15 nC at Vgs supports fast switching speeds, while the gate source voltage tolerance of -20 V to +20 V protects the component during transient operations. With physical dimensions measuring 6.7 mm length, 3.7 mm width, and 1.65 mm height, the SOT-223 package facilitates easy PCB mounting and thermal management.
This P-Channel MOSFET is ideal for power management tasks in automotive, industrial machinery, consumer electronics, and other discrete semiconductor applications where controlled switching and power efficiency are critical.
The device operates in enhancement mode providing reliable switching performance. Maximum drain source resistance is 150 milliohms ensuring efficient conduction. Maximum power dissipation of 3.13 W supports moderate power applications.
The transistor has a typical gate charge of 15 nC at Vgs enhancing fast switching capabilities. Operating temperature range extends from -55°C to 150°C for robust environmental tolerance. Compact SOT-223 surface mount package with dimensions: 6.7 mm length, 3.7 mm width, and 1.65 mm height.
Maximum gate source voltage rating of -20 V to +20 V ensures gate protection during operation. Automotive AEC standard compliant, suitable for automotive and industrial applications. Explore EnvMart for a wide range of Semiconductor components including MOSFETs and other power transistors ideal for industrial and automotive electronics.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.9 A.
It has a maximum drain source voltage of 30 V.
The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height.
The typical gate charge at Vgs for this P-Channel MOSFET is 15 nC.
The maximum power dissipation rating for this model is 3.13 W.
It operates within an extended temperature range of -55°C to 150°C.
The maximum gate source voltage rating is -20 V to +20 V.
The maximum drain source resistance is 150 mΩ.
Yes, it is compliant with the AEC automotive standard.
This model uses a surface mount type.
This MOSFET utilizes a P-channel type.
It is suitable for automotive and industrial applications requiring controlled switching and power efficiency.
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