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onsemi Transistor NPN 800 mA 32 V 3-Pin SOT-23 BCW65CLT1G

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onsemi Transistor NPN 800 mA 32 V 3-Pin SOT-23 BCW65CLT1G

Name: onsemi Transistor NPN 800 mA 32 V 3-Pin SOT-23 BCW65CLT1G
Brand: onsemi
SKU: 373167
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	BCW65CLT1G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	32V
Minimum DC Current Gain hFE	35
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	60V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	800mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

This transistor is configured as a single NPN type suitable for general use.
The SOT-23 surface mount package enables compact PCB design.
Maximum power dissipation is 225 mW for reliable operation.
It supports a maximum transition frequency of 100 MHz, enabling high-speed switching.
The product operates over a temperature range from -55°C to 150°C.
The device has a minimum DC current gain (hFE) of 35, ensuring adequate amplification.
It features maximum voltages of 60 V for collector-base and 5 V for emitter-base junctions.
The physical dimensions are 3.04 mm length, 2.64 mm width, and 1.11 mm height.

Product Description

onsemi BCW65CLT1G is a high-quality NPN bipolar transistor configured as a single transistor device. Designed for use in a wide range of applications, it features a maximum DC collector current rating of 800 mA and a collector-emitter voltage limit of 32 V. Housed in a compact 3-pin SOT-23 surface mount package, it enables space-saving layout in electronic circuits.

This transistor maintains robust performance with a maximum power dissipation of 225 mW and supports high-frequency applications up to 100 MHz transition frequency. It operates reliably in a temperature range from -55°C to 150°C, making it suitable for industrial, commercial, and consumer electronics.

The device offers a minimum DC current gain (hFE) of 35, which provides sufficient amplification for switching and amplification tasks. Maximum voltage ratings include 60 V for collector-base and 5 V for emitter-base junctions, ensuring safe operation within specified electrical limits.

Physical dimensions include a length of 3.04 mm, width of 2.64 mm, and height of 1.11 mm, making it compatible with standard surface mount assembly processes. While it does not hold automotive qualification, it is ideal for general purpose use in semiconductor circuits.

This transistor is configured as a single NPN type suitable for general use. The SOT-23 surface mount package enables compact PCB design. Maximum power dissipation is 225 mW for reliable operation. It supports a maximum transition frequency of 100 MHz, enabling high-speed switching.

The product operates over a temperature range from -55°C to 150°C. The device has a minimum DC current gain (hFE) of 35, ensuring adequate amplification. It features maximum voltages of 60 V for collector-base and 5 V for emitter-base junctions.

The physical dimensions are 3.04 mm length, 2.64 mm width, and 1.11 mm height. This transistor is not automotive qualified but suitable for various semiconductor applications. Explore more semiconductor components and Bipolar Transistors under the Electronics & Electricals category at EnvMart for your circuit design and manufacturing needs.