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onsemi NPN Transistor BCW65CLT1G, 800 mA, 32 V, 225 mW, 3-Pin SOT-23 Surface Mount BCW65CLT1G

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onsemi NPN Transistor BCW65CLT1G, 800 mA, 32 V, 225 mW, 3-Pin SOT-23 Surface Mount BCW65CLT1G

Name: onsemi NPN Transistor BCW65CLT1G, 800 mA, 32 V, 225 mW, 3-Pin SOT-23 Surface Mount BCW65CLT1G
Brand: onsemi
SKU: 373163
Price: 0.03 USD
Availability: InStock

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Category Transistor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	BCW65CLT1G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	32V
Minimum DC Current Gain hFE	35
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	60V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	800mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

Compact 3-pin SOT-23 surface mount package suitable for space-sensitive applications.
Maximum power dissipation of 225 milliwatts supports moderate power applications.
High transition frequency of 100 MHz ensures fast switching performance.
Operating temperature range from -55°C to 150°C for robust performance under harsh environments.
Minimum DC current gain (hFE) of 35 providing efficient amplification.
Maximum collector-base voltage of 60 V and emitter-base voltage of 5 V for reliable operation.
Single transistor configuration optimized for NPN polarity applications.
No automotive compliance but ideal for industrial and electronic semiconductor use cases.

Product Description

onsemi BCW65CLT1G NPN Transistor is a general purpose bipolar transistor designed primarily for switching and amplification in electronic circuits. It supports a maximum DC collector current of 800 mA and a collector-emitter voltage of up to 32 V, making it suitable for a variety of power control and signal processing tasks within consumer electronics, industrial machinery, and laboratory instrumentation.

This transistor is housed in a compact SOT-23 3-pin surface mount package, ideal for high-density printed circuit boards requiring space-saving solutions. It dissipates up to 225 milliwatts of power, providing moderate power handling capability for small to medium load switching.

Featuring a minimum DC current gain (hFE) of 35 and a maximum transition frequency of 100 MHz, the BCW65CLT1G transistor delivers efficient amplification with fast switching speed suited for RF and digital circuits.

The device operates reliably across an industrial temperature range from -55°C to 150°C, ensuring durability in demanding environments. It possesses a maximum collector-base voltage of 60 V and emitter-base voltage of 5 V, meeting common industrial voltage requirements.

Due to its non-automotive qualification status, the transistor is recommended for electronic component applications in industrial, electronic replacement parts, prototyping, and educational projects where high-reliability automotive grade components are not mandatory.

Physical dimensions (3.04 mm length × 2.64 mm width × 1.11 mm height) facilitate easy integration into compact circuit layouts. The single transistor configuration and NPN polarity make it versatile for switching circuits, amplifiers, and signal modulation applications.

Compact 3-pin SOT-23 surface mount package. Handles collector current up to 800 mA. Collector-emitter voltage maximum 32 V. Power dissipation up to 225 mW. High-frequency operation up to 100 MHz. Explore additional semiconductors, discrete transistors, and bipolar Transistors available at EnvMart for your electronic design and manufacturing needs.