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onsemi PNP Transistor 3-Pin SOT-723, -100 mA, -50 V, Surface Mount 2SA2029M3T5G

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onsemi PNP Transistor 3-Pin SOT-723, -100 mA, -50 V, Surface Mount 2SA2029M3T5G

Name: onsemi PNP Transistor 3-Pin SOT-723, -100 mA, -50 V, Surface Mount 2SA2029M3T5G
Brand: onsemi
SKU: 373154
Price: 0.06 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.55mm
Length	0.85mm
Model	2SA2029M3T5G
Width	1.25mm
Mount Type	Surface
Series	2SA2029M
Maximum Operating Temperature	150°C
Package Type	SOT-723
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-50V
Minimum DC Current Gain hFE	120
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-6V
Maximum Collector Base Voltage VCBO	-60V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	265mW
Maximum DC Collector Current Idc	-100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	140MHz

Key Features

This transistor has a maximum power dissipation of 265 mW for reliable operation.
It features a single transistor configuration with 3 pins for easy PCB mounting.
The device operates within a temperature range of -55°C to 150°C, suitable for various industrial applications.
The maximum transition frequency is 140 MHz, optimizing it for high-frequency usage.
The package type is SOT-723, supporting surface mount technology.
Complies with the automotive standard AEC-Q101, ensuring automotive reliability.
The transistor polarity is PNP with a minimum DC current gain (hFE) of 120.

Product Description

onsemi 2SA2029M3T5G PNP Transistor 3-Pin SOT-723 is a compact, high-performance surface mount transistor designed for electronic components and semiconductor applications.

This transistor is rated for a maximum DC collector current of -100 mA and a maximum collector-emitter voltage of -50 V, making it suitable for low power switching and amplification.

The device provides reliable operation with a power dissipation capability of 265 mW and operates efficiently within a broad temperature range from -55°C to 150°C, suitable for industrial, automotive, and general electronic system use.

It features a single PNP configuration with a three-pin layout in a SOT-723 package, providing easy surface mounting on PCBs in compact designs.

The 2SA2029M3T5G has a maximum transition frequency of 140 MHz and a minimum DC current gain of 120, delivering fast switching and amplification capabilities for various signal processing applications.

This transistor supports automotive applications compliant with the AEC-Q101 standard. The package dimensions are 0.55 mm in height, 0.85 mm in length, and 1.25 mm in width. The maximum collector base voltage is -60 V, while the maximum emitter base voltage is -6 V.

This component is ideal for manufacturing, automotive electronic controls, consumer electronics, and other industrial applications requiring a PNP transistor with small form factor and high reliability.

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Frequently Asked Questions

The maximum power dissipation of this model is 265 mW, ensuring reliable operation in various applications.

This transistor operates efficiently within a temperature range of -55°C to 150°C, making it suitable for industrial and automotive applications.

The maximum collector-emitter voltage (Vceo) for this transistor is -50 V, allowing it to handle low power switching and amplification tasks.

This transistor features a single configuration with 3 pins, facilitating easy PCB mounting.

The maximum transition frequency for the 2SA2029M3T5G is 140 MHz, optimizing it for high-frequency applications.

The minimum DC current gain (hFE) for this transistor is 120, which supports effective signal processing capabilities.

This model comes in a SOT-723 package type, designed for surface mount technology.

The 2SA2029M3T5G complies with the automotive standard AEC-Q101, ensuring reliability for automotive applications.

The dimensions of this transistor are 0.55 mm in height, 0.85 mm in length, and 1.25 mm in width.

The maximum DC collector current (Idc) for this model is -100 mA, suitable for low power applications.

The maximum emitter-base voltage (VEBO) for this model is -6 V, allowing for appropriate voltage handling in circuits.

This transistor is suitable for manufacturing, automotive electronic controls, consumer electronics, and other industrial applications requiring a PNP transistor.