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onsemi Transistor 100 mA NPN 45 V Surface Mount 6-Pin SOT-363 BC847CDW1T1G

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onsemi Transistor 100 mA NPN 45 V Surface Mount 6-Pin SOT-363 BC847CDW1T1G

Name: onsemi Transistor 100 mA NPN 45 V Surface Mount 6-Pin SOT-363 BC847CDW1T1G
Brand: onsemi
SKU: 373159
Price: 0.03 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.1mm
Length	2.2mm
Model	BC847CDW1T1G
Width	1.35mm
Mount Type	Surface
Series	BC847CDW1
Maximum Operating Temperature	150°C
Package Type	SOT-363
Minimum Operating Temperature	-55°C
Pin Count	6
Maximum Collector Emitter Voltage Vceo	45V
Minimum DC Current Gain hFE	200
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	50V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	380mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

100 mA maximum DC collector current for general purpose switching.
Maximum collector emitter voltage of 45 V provides reliable operation in low-voltage circuits.
Surface mount package type SOT-363 with 6 pins for compact PCB layouts.
NPN transistor configuration suitable for amplification and switching applications.
High current gain with minimum hFE of 200 for efficient signal amplification.
Maximum power dissipation of 380 mW ensures dependable thermal performance.
Wide operating temperature range from -55°C to 150°C for industrial applications.
Compliant with automotive standard AEC-Q101 ensuring quality and reliability.

Product Description

onsemi BC847CDW1T1G is a general purpose NPN bipolar transistor designed for switching and amplification with a maximum DC collector current of 100 mA and a voltage rating of 45 V. It is housed in a compact, surface mount SOT-363 package with 6 pins, ideal for dense PCB designs in electronic components and semiconductor applications.

This transistor features a strong current gain with a minimum DC current gain (hFE) of 200, making it suitable for signal amplification in both industrial and automotive electronics. It supports a maximum power dissipation of 380 mW enabling stable operation under varied electrical loads.

The product operates reliably across a wide temperature range from -55°C to 150°C, and conforms to the automotive AEC-Q101 standard, ensuring quality, reliability, and performance in automotive and industrial environments.

Physical size is compact with dimensions of 2.2 mm length, 1.35 mm width, and 1.1 mm height. This makes the transistor an excellent choice for space-constrained applications requiring efficient thermal management and electrical performance.

100 mA maximum DC collector current. 45 V maximum collector emitter voltage. Surface mount SOT-363 package with 6 pins. NPN configuration for switching and amplification. Minimum DC current gain (hFE) of 200. Maximum power dissipation of 380 mW.

Operating temperature range from -55°C to 150°C. Automotive standard AEC-Q101 qualified. Compact dimensions: 2.2 mm x 1.35 mm x 1.1 mm.

This transistor is commonly used in electronic manufacturing, automotive electronics, communication equipment, and industrial control systems. Its reliable performance and automotive qualification make it suitable for rigorous environments demanding high quality and durability.

Explore the range of Bipolar Transistors and related semiconductor components on EnvMart to find compatible products for your electronic designs and industrial applications.