Nexperia N-Channel MOSFET, 57 A, 100 V Enhancement Type, 3-Pin TO-220 Package PSMN016-100PS,127

Nexperia PSMN016-100PS,127 N-Channel MOSFET is engineered for enhanced performance in power management systems. This enhancement mode transistor supports a maximum continuous drain current of 57 A and withstands a drain-source voltage of up to 100 V, ideal for efficient switching in industrial and electronic applications.

Its TO-220 package is designed for through-hole mounting, providing mechanical strength and ease of integration into various circuit boards. With a low drain-source resistance of 28.8 mΩ and maximum power dissipation of 148 W, it enables efficient power handling and minimal losses during operation.

Rated for a wide temperature range from -55°C to 175°C, this MOSFET performs reliably in harsh environments such as industrial controls, automotive electronics, and power conversion systems. The device's gate characteristics include a typical gate charge of 49 nC and a maximum gate-source voltage rating of ±20 V, allowing precise control and safe operation.

Dimensionally compact, its height of 16 mm, length of 10.3 mm, and width of 4.7 mm make it suitable for dense circuit layouts. Though it carries no specific standards or automotive certifications, it is built for durability and high-performance applications.

This MOSFET, manufactured in the Philippines, supports a broad spectrum of industrial, electronic, and power devices, enhancing reliability and efficiency. Maximum continuous drain current of 57 Amperes for high current applications.

Maximum drain-source voltage of 100 Volts ensuring reliable operation under voltage stress. TO-220 package with through-hole mount and 3 pins for robust installation. Low maximum drain-source resistance of 28.8 milliohms for reduced power loss.

Maximum power dissipation up to 148 Watts allowing high thermal handling. Wide operating temperature range from -55°C to 175°C for durability. Typical gate charge of 49 nanocoulombs at Vgs for efficient switching. Maximum gate-source voltage range of -20 to +20 Volts ensuring safe gate operation.

Small footprint dimensions: 16 mm height, 10.3 mm length, and 4.7 mm width. Explore more power semiconductor components and MOSFETs on EnvMart to support your industrial, manufacturing, and electronics design requirements.