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Nexperia N-Channel MOSFET, 59 A, 60 V Enhancement Mode, 4-Pin SOT-669 Package PSMN012-60YS,115
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN012-60YS,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 59A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 17.8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 89W |
| Typical Gate Charge Qg @ Vgs | 28.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Maximum continuous drain current of 59 A for high power handling.
- Maximum drain-source voltage rating of 60 V suitable for medium voltage applications.
- Surface mount package type SOT-669 with four pins for PCB footprint compatibility.
- Enhancement mode operation with maximum gate voltage range between -20 V and +20 V.
- Maximum power dissipation rating of 89 W allowing thermal durability.
- Operating temperature range from -55°C to 175°C ensuring robustness across environments.
- Low maximum drain-source resistance of 17.8 milliohms for efficient conduction.
Product Description
Nexperia PSMN012-60YS,115 is a high-performance N-Channel MOSFET designed for power switching applications requiring robust current and voltage handling capabilities. Featuring a maximum continuous drain current of 59 A and drain-source voltage rating of 60 V, this device supports efficient power management in industrial, automotive, and consumer electronics.
Housed in a compact 4-pin surface mount SOT-669 package, the MOSFET ensures easy PCB integration while maintaining low conduction losses thanks to its 17.8 mΩ maximum drain-source resistance. The enhancement mode channel type delivers reliable switching with gate voltages ranging between -20 V and +20 V and typical gate charge of 28.4 nC.
This transistor supports maximum power dissipation up to 89 W and operates reliably across a wide temperature range from -55°C to 175°C, ensuring stability in demanding environments including industrial controls, power supplies, and communication devices.
The device is manufactured in the Philippines maintaining strict quality controls without specific standards or automotive certifications. Typical device dimensions are 5 mm length, 4.1 mm width, and 1.1 mm height, making it suitable for compact circuit layouts.
Key application sectors include industrial automation, power electronics, and electronic instrumentation where efficient and reliable MOSFET performance is critical. It does not carry specific approvals but is backed by Nexperia's expertise in semiconductor technologies.
Maximum continuous drain current of 59 A for high power handling. Maximum drain-source voltage rating of 60 V suitable for medium voltage applications. Surface mount SOT-669 package for PCB integration. Enhancement mode with gate voltage range -20 V to +20 V.
Maximum power dissipation rating of 89 W for thermal endurance. Operating temperature range from -55°C to 175°C supports harsh environments. Low Rds(on) of 17.8 milliohms reduces conduction losses effectively. Compact package dimensions of 5 mm × 4.1 mm × 1.1 mm.
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Frequently Asked Questions
The maximum continuous drain current for this model is 59 A, allowing for high power handling capabilities.
This MOSFET has a maximum drain-source voltage rating of 60 V, making it suitable for medium voltage applications.
It is housed in a surface mount SOT-669 package, which features four pins for easy PCB integration.
The operating temperature range for this model is from -55°C to 175°C, ensuring reliability in various environments.
The maximum power dissipation rating for this MOSFET is 89 W, allowing for thermal endurance during operation.
This model features a low maximum drain-source resistance of 17.8 milliohms, which helps reduce conduction losses.
The typical gate charge for this device is 28.4 nC at the specified gate-source voltage.
The gate voltage range for this enhancement mode MOSFET is between -20 V and +20 V.
The dimensions of this model are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
This MOSFET is suitable for applications in industrial automation, power electronics, and electronic instrumentation.
The channel type of this device is N-Channel, which is typical for enhancement mode MOSFETs.
This model is manufactured in the Philippines, adhering to strict quality controls.
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