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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN014-40YS,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 46A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 20mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 56W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Nexperia PSMN014-40YS,115 N-Channel MOSFET is a high-performance, enhancement mode transistor designed for discrete semiconductor applications requiring efficient switching and high current conduction. With a maximum continuous drain current rating of 46 A and a voltage tolerance of 40 V, this device is suitable for power management and converter circuits.
Its surface mount SOT-669 package with 4 pins facilitates compact PCB assembly in electronics and electrical applications. The device offers a low maximum drain-source resistance of 20 mΩ, minimizing power losses during operation and enhancing efficiency.
The MOSFET features a typical gate charge of 12 nC, enabling fast switching speed and reduced gate drive power consumption. Its rating includes a maximum power dissipation limit of 56 W and the capability to operate across temperature extremes from -55°C to +175°C, ensuring durability in industrial, automotive, and power electronics environments.
With maximum gate-source voltage withstand of ±20 V, the transistor offers stable operation under varied control voltages. Compact physical dimensions (5 mm length, 4.1 mm width, 1.1 mm height) permit use in space-constrained designs.
This MOSFET is ideal for industrial automation, power supplies, motor drive circuits, and other semiconductor switching applications requiring reliability and high current handling.
The device supports a maximum continuous drain current of 46 amperes. Its maximum drain-source voltage rating is 40 volts. Utilizes an enhancement channel mode for controlled switching. The maximum drain-source resistance is 20 milliohms ensuring low conduction losses.
Operates efficiently with a maximum power dissipation of 56 watts. Designed with a typical gate charge of 12 nanocoulombs at Vgs. Operating temperature range from -55°C up to 175°C for robust reliability. Maximum gate-source voltage rating of ±20 volts to withstand control voltages.
Compact physical dimensions: length 5 mm, width 4.1 mm, height 1.1 mm. Four pins in SOT-669 package enable easy PCB mounting. Explore EnvMart's extensive range of semiconductor MOSFETs for your power control and switching solutions.
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