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Nexperia N-Channel MOSFET 46 A 40 V Enhancement Mode Surface Mount 4-Pin SOT-669 PSMN014-40YS,115

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 5mm
Model PSMN014-40YS,115
Width 4.1mm
Mount Type Surface
Maximum Operating Temperature 175°C
Package Type SOT-669
Minimum Operating Temperature -55°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 46A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 20mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 56W
Typical Gate Charge Qg @ Vgs 12nC
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • The device supports a maximum continuous drain current of 46 amperes.
  • Its maximum drain-source voltage rating is 40 volts.
  • Utilizes an enhancement channel mode for controlled switching.
  • The maximum drain-source resistance is 20 milliohms ensuring low conduction losses.
  • Operates efficiently with a maximum power dissipation of 56 watts.
  • Designed with a typical gate charge of 12 nanocoulombs at Vgs.
  • Operating temperature range from -55°C up to 175°C for robust reliability.
  • Maximum gate-source voltage rating of ±20 volts to withstand control voltages.

Product Description

Nexperia PSMN014-40YS,115 N-Channel MOSFET is a high-performance, enhancement mode transistor designed for discrete semiconductor applications requiring efficient switching and high current conduction. With a maximum continuous drain current rating of 46 A and a voltage tolerance of 40 V, this device is suitable for power management and converter circuits.

Its surface mount SOT-669 package with 4 pins facilitates compact PCB assembly in electronics and electrical applications. The device offers a low maximum drain-source resistance of 20 mΩ, minimizing power losses during operation and enhancing efficiency.

The MOSFET features a typical gate charge of 12 nC, enabling fast switching speed and reduced gate drive power consumption. Its rating includes a maximum power dissipation limit of 56 W and the capability to operate across temperature extremes from -55°C to +175°C, ensuring durability in industrial, automotive, and power electronics environments.

With maximum gate-source voltage withstand of ±20 V, the transistor offers stable operation under varied control voltages. Compact physical dimensions (5 mm length, 4.1 mm width, 1.1 mm height) permit use in space-constrained designs.

This MOSFET is ideal for industrial automation, power supplies, motor drive circuits, and other semiconductor switching applications requiring reliability and high current handling.

The device supports a maximum continuous drain current of 46 amperes. Its maximum drain-source voltage rating is 40 volts. Utilizes an enhancement channel mode for controlled switching. The maximum drain-source resistance is 20 milliohms ensuring low conduction losses.

Operates efficiently with a maximum power dissipation of 56 watts. Designed with a typical gate charge of 12 nanocoulombs at Vgs. Operating temperature range from -55°C up to 175°C for robust reliability. Maximum gate-source voltage rating of ±20 volts to withstand control voltages.

Compact physical dimensions: length 5 mm, width 4.1 mm, height 1.1 mm. Four pins in SOT-669 package enable easy PCB mounting. Explore EnvMart's extensive range of semiconductor MOSFETs for your power control and switching solutions.

Nexperia N-Channel MOSFET 46 A 40 V Enhancement Mode Surface Mount 4-Pin SOT-669 PSMN014-40YS,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 46 amperes.

This device has a maximum drain-source voltage rating of 40 volts.

It operates efficiently with a maximum power dissipation of 56 watts.

The dimensions are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.

The maximum gate-source voltage rating is ±20 volts.

It has a typical gate charge of 12 nanocoulombs at Vgs.

The maximum drain-source resistance is 20 milliohms, which helps minimize conduction losses.

The operating temperature range is from -55°C to 175°C.

This model utilizes an enhancement channel mode for controlled switching.

The SOT-669 package has 4 pins, allowing for easy PCB mounting.

It is suitable for power management, converter circuits, industrial automation, and motor drive applications.

The country of origin for this MOSFET is India.

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