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Nexperia P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SC-70 PMF170XP,115

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model PMF170XP,115
Width 1.35mm
Mount Type Surface
Series PMF170XP
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 1A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.67W
Typical Gate Charge Qg @ Vgs 2.6nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 1.3V

Key Features

  • Designed for surface mount applications with a compact 3-pin SC-70 package.
  • Offers a maximum continuous drain current of 1 ampere ensuring efficient current handling.
  • Supports drain-source voltage up to 20 volts for moderate voltage applications.
  • Features an enhancement mode channel for controlled switching performance.
  • Maximum drain-source resistance of 200 milliohms ensures low power loss.
  • Operates reliably within temperature range from -55°C to 150°C suitable for various industrial environments.
  • Maximum power dissipation capability of 1.67 watts supports thermal management.
  • Includes a typical gate charge of 2.6 nanocoulombs for fast switching.

Product Description

Nexperia PMF170XP,115 is a P-Channel MOSFET specifically engineered for efficient power management in electronic circuits requiring moderate current and voltage ratings.

Featuring a compact 3-pin SC-70 surface mount package, it suits applications in industrial, consumer electronics, and embedded system designs where space-saving and reliable switching are priorities.

This MOSFET supports a maximum continuous drain current of 1 ampere and can sustain a maximum drain-source voltage of 20 volts, making it ideal for low to medium-power switching operations.

The device's enhancement channel mode enables controlled gate-driven switching with low on-resistance of 200 milliohms, minimizing conduction losses and improving energy efficiency.

Operating temperature range from -55°C to 150°C allows deployment in harsh environmental conditions including automotive and industrial applications. It accommodates a high maximum power dissipation of 1.67 watts, supporting robustness in thermal performance.

The PMF170XP,115 features a typical gate charge of 2.6 nC and a maximum gate-source voltage rating of ±12 volts, suitable for fast switching with stable control. Its physical size, measuring 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height, promotes compact PCB design and integration.

Designed for surface mount applications with a compact 3-pin SC-70 package. Offers a maximum continuous drain current of 1 ampere ensuring efficient current handling. Supports drain-source voltage up to 20 volts for moderate voltage applications.

Features an enhancement mode channel for controlled switching performance. Maximum drain-source resistance of 200 milliohms ensures low power loss. Operates reliably within temperature range from -55°C to 150°C suitable for various industrial environments.

Maximum power dissipation capability of 1.67 watts supports thermal management. Includes a typical gate charge of 2.6 nanocoulombs for fast switching. Forward voltage of 1.3 volts and gate-source voltage rating of ±12 volts.

Compact physical dimensions with length 2.2 mm, width 1.35 mm, and height 1.1 mm.

This product is widely used in industrial, electronics manufacturing, HVAC control circuits, automotive electronics, and power management solutions requiring compact and reliable switching components.

Explore the wide range of MOSFETs and other electronic semiconductor components available to suit your design and manufacturing needs at EnvMart.

Nexperia P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SC-70 PMF170XP,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 1 ampere.

It can sustain a maximum drain-source voltage of 20 volts.

The typical gate charge is 2.6 nanocoulombs.

The maximum power dissipation capability is 1.67 watts.

This unit measures 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

It operates reliably within a temperature range from -55°C to 150°C.

It comes in a compact 3-pin SC-70 surface mount package.

The maximum drain-source resistance is 200 milliohms.

The maximum gate-source voltage rating is ±12 volts.

This MOSFET is widely used in industrial, consumer electronics, HVAC control circuits, automotive electronics, and power management solutions.

It features a P-channel type for controlled switching performance.

The forward voltage is 1.3 volts.

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