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Nexperia Type P-Channel MOSFET 1 A 20 V Enhancement 3-Pin SC-70 PMF170XP

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 2.2mm
Model PMF170XP
Width 1.35mm
Mount Type Surface
Series PMF170XP
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 1A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 200mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.67W
Typical Gate Charge Qg @ Vgs 2.6nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 1.3V

Key Features

  • Features a compact 3-pin SC-70 package suitable for surface mounting.
  • Enhanced channel mode ensures efficient switching performance.
  • Maximum power dissipation rated at 1.67 W permits reliable operation within thermal limits.
  • Operates safely within temperature range from -55°C to 150°C.
  • Typical gate charge of 2.6 nC supports fast switching speeds.
  • Forward voltage is maintained at 1.3 V for efficient conduction.
  • Maximum drain-source resistance of 200 mΩ reduces power loss during operation.
  • Maximum gate-source voltage swings between -12 V and +12 V to protect device integrity.

Product Description

The Nexperia PMF170XP is a high-quality Type P-Channel MOSFET designed for semiconductor applications requiring efficient and reliable switching performance. Encapsulated in a small 3-pin SC-70 surface mount package, this device supports a maximum continuous drain current of 1 A and a maximum drain-source voltage of 20 V, making it suitable for compact power management circuits and switching applications.

This MOSFET operates in enhancement mode with a robust construction allowing for maximum power dissipation of 1.67 W and a wide operating temperature range from -55°C up to 150°C, ensuring dependable performance in harsh industrial, electronic, automotive, and power control environments. The typical gate charge of 2.6 nC facilitates fast switching, enhancing circuit efficiency.

With a maximum drain-source resistance of 200 milliohms and a forward voltage of 1.3 V, the PMF170XP helps minimize power losses and thermal impact during conduction. The device tolerates gate-source voltages up to ±12 V, providing resilience against voltage surges.

Physical dimensions are compact - 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height - allowing for dense PCB layouts in modern electronics. This product is manufactured in Malaysia adhering to rigorous quality standards, reflecting Nexperia's commitment to reliable electronic components.

Compact 3-pin SC-70 surface mount package. Type P-Channel MOSFET with enhancement mode operation. 1 A maximum continuous drain current at 20 V drain-source voltage. Reliable operation from -55°C to 150°C with 1.67 W power dissipation.

Typical gate charge of 2.6 nC enabling efficient switching. Low Rds(on) resistance of 200 mΩ to reduce conduction losses. Supports gate-source voltages of ±12 V. Compact footprint suitable for space-constrained applications.

This MOSFET is ideal for discrete electronic semiconductor use cases including power management, consumer electronics, telecommunication devices, automotive systems, and industrial control equipment. Its enhanced efficiency and robust operating range make it a valuable component in design and manufacturing operations.

Choose Nexperia PMF170XP Type P-Channel MOSFET to enhance your circuit design reliability and performance in diverse electrical engineering applications. Explore more in the MOSFET category at EnvMart for a wide range of semiconductor components.

Nexperia Type P-Channel MOSFET 1 A 20 V Enhancement 3-Pin SC-70 PMF170XP
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Frequently Asked Questions

The maximum continuous drain current for this model is 1 A.

It can handle a maximum drain-source voltage of 20 V.

The maximum power dissipation is rated at 1.67 W.

The typical gate charge is 2.6 nC, which supports fast switching speeds.

It operates safely within a temperature range from -55°C to 150°C.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

The maximum drain-source resistance is 200 mΩ, which helps reduce power loss during operation.

It comes in a compact 3-pin SC-70 surface mount package.

The forward voltage is maintained at 1.3 V for efficient conduction.

The device supports maximum gate-source voltage swings between -12 V and +12 V.

This model operates in enhancement mode.

It is manufactured in Malaysia.

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