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Nexperia N-Channel MOSFET 7 A, 30 V Enhancement Mode, 8-Pin DFN Surface Mount PMPB20EN,115
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 0.65mm |
| Length | 2.1mm |
| Model | PMPB20EN,115 |
| Width | 2.1mm |
| Mount Type | Surface |
| Series | PMPB20EN |
| Maximum Operating Temperature | 150°C |
| Package Type | DFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 19.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Typical Gate Charge Qg @ Vgs | 7.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This MOSFET supports a maximum continuous drain current of 7 amperes.
- It operates with a maximum drain-source voltage rating of 30 volts.
- The device features a low Rds(on) of 19.5 milliohms for minimal conduction loss.
- Designed for surface mount applications, it has a compact DFN package with dimensions of 2.1 mm by 2.1 mm.
- The MOSFET has a maximum power dissipation rating of 12.5 watts ensuring reliable operation under load.
- It operates within a temperature range of -55°C to 150°C for industrial stability.
- The gate charge is typically 7.2 nanocoulombs facilitating fast switching performance.
- Maximum gate-source voltage is ±20 volts to protect the gate terminal.
Product Description
Nexperia PMPB20EN,115 is a high-performance N-Channel MOSFET designed for reliable power switching and amplification in electronic circuits. With a maximum continuous drain current of 7 A and maximum drain-source voltage of 30 V, it suits a variety of industrial, automotive, and electronics applications requiring efficient power handling in compact packages.
Featuring an 8-pin dual flat no-lead (DFN) package measuring 2.1 mm in length and width and a height of 0.65 mm, this surface mount device integrates easily into modern printed circuit boards with minimal footprint, optimizing space in compact electronic assemblies.
The MOSFET exhibits a low drain-source resistance (Rds(on)) of 19.5 milliohms, reducing conduction losses and improving energy efficiency. Its gate charge of 7.2 nC supports rapid switching, making it ideal for use in DC-DC converters, power regulators, and load switches requiring fast response times.
Operating temperature ranges from -55°C to 150°C provide robustness across harsh environmental conditions typical of automotive and industrial settings. The maximum power dissipation of 12.5 W ensures thermal stability during operation.
This enhancement mode device supports gate-source voltages up to ±20 V, maintaining reliability and protecting against voltage surges. Its N-channel configuration facilitates effective load control and switching in positive supply circuits.
Maximum continuous drain current: 7 A for robust power delivery. Maximum drain-source voltage: 30 V supports mid-range power applications. Compact 8-pin DFN package for space-efficient integration. Low Rds(on) of 19.5 milliohms enhances efficiency.
High operating temperature range suitable for industrial use. Efficient gate charge enabling fast switching speeds. Wide gate voltage tolerance to ensure reliability.
The Nexperia PMPB20EN,115 is ideally suited for electronic component manufacturers and engineers designing power electronic systems, embedded devices, and automotive circuits. Its quality and features align with industrial standards while providing dependable performance in semiconductor discrete device applications.
Explore the Electronics & Electricals category for related semiconductor products and MOSFET options on EnvMart for your power system needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7 amperes.
It operates with a maximum drain-source voltage rating of 30 volts.
The device features a low Rds(on) of 19.5 milliohms, which minimizes conduction loss.
The DFN package measures 2.1 mm in length and width, with a height of 0.65 mm.
The maximum power dissipation rating is 12.5 watts, ensuring reliable operation under load.
It operates within a temperature range of -55°C to 150°C, suitable for industrial applications.
The typical gate charge is 7.2 nanocoulombs, facilitating fast switching performance.
The maximum gate-source voltage is ±20 volts, which protects the gate terminal.
This model has a pin count of 8.
It features an N-channel configuration, which is effective for load control in positive supply circuits.
This MOSFET is suitable for applications in power switching and amplification in electronic circuits, including DC-DC converters and power regulators.
The series name of this MOSFET is PMPB20EN.
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